Results 141 to 150 of about 141,240 (252)

A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity

Advanced Science, Volume 13, Issue 9, 13 February 2026.
This study reports a βp$\ubeta^{\text{p}}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit. It is found that indium selenide films with βp$\ubeta^{\text{p}}$ layers display electric field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking ...
Fabia F. Athena, Cooper A. Voigt, Mengkun Tian, Anjan Goswami, Emily Toph, Moses Nnaji, Fanuel Mammo, Brent K. Wagner, Sungho Jeon, Wenshan Cai, Eric M. Vogel   +10 more
wiley   +1 more source

Al Nanoparticle‐Decorated Metal Oxide Synaptic Transistors for Ultralow‐Energy Neuromorphic Computing with Wide Dynamic Range

Advanced Science, Volume 13, Issue 9, 13 February 2026.
A nanoparticle‐engineered electrolyte‐gated memtransistor is introduced as a materials‐level strategy to overcome the intrinsic trade‐off between energy consumption and synaptic precision. By embedding aluminum nanoparticles at the oxide–electrolyte interface to modulate ion trapping dynamics, the device achieves stable multistate plasticity under ...
Jun‐Gyu Choi, Yoonseok Song, Seokhyeon Baek, Jingon Jang, Sungjun Park   +4 more
wiley   +1 more source

ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
By directly comparing PEALD (P‐IGZO) and thermal‐ALD (T‐IGZO), we show that oxidant reactivity governs atomically ordered InOx–(Ga, Zn)O nanolaminates and a robust 2DEG in amorphous IGZO. PEALD with oxygen plasma forms sharper, chemically distinct interfaces and higher InOx connectivity, achieving ∼90 cm2 V−1 s−1 mobility and superior BTI stability ...
Yoon‐Seo Kim, Daejung Kim, Ki‐Cheol Song, Yeonhee Lee, Hyeong‐Suk Yoo, Young Jae Kim, Jonghoon Kim, Jin‐Seong Park   +7 more
wiley   +1 more source

Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga2O3 MOSFETs

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga2O3 metal‐oxide‐semiconductor filed effect transistors was investigated by extending the gate to fully cover the etched recess. Complete recess coverage improves electrostatic control, reduces series resistance, shifts the threshold voltage positively, and enhances mobility, on‐resistance ...
Ching‐Hsuan Lee, Sheng‐Ti Chung, Siddharth Rana, Chien‐Nan Hsiao, Tejender Singh Rawat, Yi‐Kai Hsiao, Hao‐Chung Kuo, Ray‐Hua Horng   +7 more
wiley   +1 more source

Bayesian Inference via GeTex‐OTS Based Stochastic Synapse for Uncertainty‐Aware Medical Diagnostics

SmartMat, Volume 7, Issue 1, February 2026.
This work reports a GeTex ovonic threshold switch integrated into a compact 1S1T1R stochastic synapse that directly realizes an MC‐Dropconnect Bayesian neural network. Tunable probabilistic switching enables uncertainty‐aware COVID‐19 diagnosis and MNIST recognition while remaining compatible with conventional 1T1R CIM architectures, highlighting a ...
Xinyu Wen, Lun Wang, Kuan Wang, Vivian Zhao, Zixuan Liu, Kexun He, Jianguo Yang, Hao Tong, Xiangshui Miao, Yuhui He   +9 more
wiley   +1 more source

Effects of channel length on temperature dependence of apparent subthreshold swing in self-aligned top-gate coplanar IGZO thin-film transistors. [PDF]

Sci Rep
Oh CE, Jeong HS, Lee SH, Lee HW, Son DH, Kim CH, Kim MH, Son KS, Lim JH, Song SH, Kwon HI.   +10 more
europepmc   +1 more source

On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

, 2020
G. Ghibaudo, M. Aouad, M. Cassé, S. Martinie, T. Poiroux, F. Balestra   +5 more
semanticscholar   +1 more source

Theoretical Limit of MOSFET Subthreshold Swing at Sub-Kelvin Temperatures

IEEE Electron Device Letters
Fully conductive band tails cause the subthreshold swing to saturate at temperatures above 1 K. However, recent measurements indicate that below 1 K, the subthreshold swing in certain MOSFET structures resumes a linear scaling with temperature. Following this ultra-steep behavior, a new type of plateau has been measured below 1 K.
openaire   +2 more sources

Circular-Gate Nanoscale Air Channel Transistors: Achieving ultralow Subthreshold Swing and Working Voltage. [PDF]

Adv Sci (Weinh)
Zhao H, Chen F, Wei Y, Sun L, Huang R, Wang X, Yang F, Jiang H, Liu Y, Li M, Zhang J.   +10 more
europepmc   +1 more source

Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric. [PDF]

RSC Adv, 2019
Chen Z, Lan L, Peng J.
europepmc   +1 more source