Impact of Hysteresis Curve on Subthreshold Swing in Ferroelectric FET
The changes in Subthreshold Swing (SS) were observed for changes in remanent polarization Pr and coercive field Ec, which determine the characteristics of the P-E hysteresis curve of ferroelectric in Ferrolectric FET (FeFET). A multilayer structure of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) was used for the junctionless double gate ...
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Embodied Cognition of Manipulative Actions: Subliminal Grasping Semantics Enhance Using-Action Recognition. [PDF]
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Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide. [PDF]
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Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature. [PDF]
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Study of dielectric modulated dual source triple gate TFET for biosensing applications. [PDF]
Cui G, Xu H.
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Performance Analysis and Optimization of an InGaAs/GaAsSb Heterojunction Dopingless Tunnel FET with a Heterogate Dielectric. [PDF]
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