Results 191 to 200 of about 141,240 (252)

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Advanced Materials, 2020
AbstractPower consumption is one of the most challenging bottlenecks for complementary metal‐oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) offer a promising platform to break the thermionic limit defined by the Boltzmann tyranny and architect energy‐efficient devices.
Yang Wang, Xiaoyuan Bai, Junwei Chu, Hongbo Wang, Gaofeng Rao, Xinqiang Pan, Xinchuan Du, Kai Hu, Xuepeng Wang, Chuanhui Gong, Chujun Yin, Chao Yang, Chaoyi Yan, Chunyang Wu, Yao Shuai, Xianfu Wang, Min Liao, Jie Xiong   +17 more
openaire   +3 more sources

Steep Subthreshold Swing Originating from Gate Delay

2019 Device Research Conference (DRC), 2019
Complex gate dielectrics are being widely explored to provide voltage amplification leading to steep subthreshold swing (SS) in transistors [1]. Here we show that hysteretic steep SS can arise simply from the introduction of a series resistance in the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET), i.e. as a dynamic effect.
P. Paletti, M. Asghari Heidarlou, K. Gonzalez Serrano, C. Alessandri, A. Seabaugh   +4 more
openaire   +2 more sources

Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors

IEEE Transactions on Electron Devices, 2019
Due to the Boltzmann distribution of carriers, the subthreshold swing (SS) of traditional metal–oxide–semiconductor field-effect transistors (MOSFETs) is above 60 mV/dec at room temperature. In this article, GaN-based negative capacitance field-effect transistors (NCFETs) were fabricated by introducing HfO2 /P(VDF-TrFE) stack as the gate dielectric ...
Wenjing Song, Yi Li, Kai Zhang, Xuming Zou, Jingli Wang, Yuechan Kong, Tangsheng Chen, Changzhong Jiang, Chuansheng Liu, Lei Liao, Xingqiang Liu   +10 more
openaire   +2 more sources

Optimization of Subthreshold Swing and Hysteresis in Hf0.5Zr0.5O2-Based MoS2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching.

ACS Applied Materials and Interfaces, 2023
Negative capacitance field effect transistors made of Hf0.5Zr0.5O2 (HZO) are one of the most promising candidates for low-power-density devices because of the extremely steep subthreshold swing and high open-state currents resulting from the addition of ...
Xiaowei Guo, Fang Wang, Zexia Ma, X. Shan, Xin Lin, Yujing Ji, Xuanyu Zhao, Yulin Feng, Yemei Han, Yangyang Xie, Zhitang Song, Kailiang Zhang   +11 more
semanticscholar   +1 more source

High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing

IEEE Electron Device Letters, 2022
We report an enhancement-mode (E-mode) ${p}$ -channel GaN heterojunction field-effect transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold swing is experimentally achieved in the E-mode GaN ${p}$ -channel transistors
Yidi Yin, Kean Boon Lee
semanticscholar   +1 more source

Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate nFETs with Scaled EOT of 1 nm

International Electron Devices Meeting, 2022
Transistor scaling enabled by gate length scaling requires EOT scaling to less than 1 nm thickness [1]. This work successfully integrates Hf-based ALD higher-k dielectrics with CVD-grown monolayer (1L) MoS2 to build top-gate nFET with EOT ~1 nm with ...
Tsung-En Lee, Yuan-Chun Su, Bo-Jiun Lin, Yi-Xuan Chen, W. Yun, Po-Hsun Ho, Jer-Fu Wang, S. Su, Chen-Feng Hsu, Po-Sen Mao, Yun-Cheng Chang, C. Chien, B. Liu, C. Su, C. Kei, Han Wang, H.-S. Philip Wong, T. Y. Lee, W.-H. Chang, Chao-Ching Cheng, I. Radu   +20 more
semanticscholar   +1 more source

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric With Ultralow Subthreshold Swing

IEEE Transactions on Electron Devices, 2021
We report a high-performance transparent amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT) gated by atomic layer deposition (ALD)-deposited HfAlOx.
L. Zhu, Yongli He, Chunsheng Chen, Xiangjing Wang, Ying Zhu, Yixin Zhu, Huiwu Mao, C. Wan, Qing Wan   +8 more
semanticscholar   +1 more source

Transistor Subthreshold Swing Lowered by 2-D Heterostructures

IEEE Transactions on Electron Devices, 2021
Steep-slope transistors are required for low-power electronic applications. However, the strategy to lower the subthreshold swing (SS) remains elusive. Here, we present a method based on altering capacitance constitution to lower the SS of 2-D transistors close to thermionic limit (60 mV/dec).
Fan Wu, He Tian, Zhaoyi Yan, Yang Shen, Jie Ren, Yi Yang, Tian-Ling Ren   +6 more
openaire   +1 more source

Low-subthreshold-swing tunnel transistors

IEEE Electron Device Letters, 2006
A formula is derived, which shows that the subthreshold swing of field-effect interband tunnel transistors is not limited to 60 mV/dec as in the MOSFET. This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these ...
null Qin Zhang, null Wei Zhao, A. Seabaugh   +2 more
openaire   +1 more source

Modeling the subthreshold swing in MOSFET's

IEEE Electron Device Letters, 1997
This letter reports on the bias-dependence of the inverse subthreshold slope or subthreshold swing in MOSFET's. It is shown by calculations and verified by experiments that the subthreshold swing varies with gate bias and exhibits a global minimum.
E.P. Vandamme, P. Jansen, L. Deferm
openaire   +1 more source