Results 201 to 210 of about 141,240 (252)

Germanium Junctionless MOSFET with Steep Subthreshold Swing

ECS Transactions, 2015
In this work, we analyze the occurrence of steep subthreshold swing (S-swing) in Double Gate (DG) Germanium (Ge) Junctionless (JL) nMOS transistors. The performance of Ge JL transistor is compared with that of Si based JL MOSFETs. Our results show that it is possible to achieve steep S-swing < 1 mV/decade along with a steep current transition of ...
Manish Gupta, Abhinav Kranti
openaire   +1 more source

Short-channel effects on MOSFET subthreshold swing

Solid-State Electronics, 1995
Abstract It is shown both experimentally and via MINIMOS simulation that the subthreshold swing S = ∂V G ∂ log 10 I D in a MOSFET may decrease significantly as gate length LG is reduced before increasing catastrophically when LG becomes so short that punchthrough current flows.
N.G. Tarr, D.J. Walkey, M.B. Rowlandson, S.B. Hewitt, T.W. MacElwee   +4 more
openaire   +1 more source

Steep Subthreshold Swing in Double Gate NCFET:A Simulation Study

2021 IEEE Latin America Electron Devices Conference (LAEDC), 2021
The rapid increase in interest on Negative capacitance Field Effect Transistors(NCFETs) is due to its Low power applications. NCFETs stepsup the voltage between the oxide and ferroelectric capacitance due to reversing (i.e, amplification) effect of a ferroelectric (fe) layer[1]. These are designed in a way such that its Subthreshold swing overcomes the
Mooli Shashank Reddy, Tejendra Dixit, K P Pradhan   +2 more
openaire   +1 more source

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

IEEE Electron Device Letters, 2020
We report high performance amorphous Indium-Gallium-Zinc-Oxide ( ${a}$ -IGZO) thin-film transis- tors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing (SS) of 70.2 mV/decade, high effective mobility ...
S. Samanta, U. Chand, Shengqiang Xu, Kaizhen Han, Ying Wu, Chengkuan Wang, Annie Kumar, Hasita Velluri, Yida Li, Xuanyao Fong, A. Thean, X. Gong   +11 more
semanticscholar   +1 more source

Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures

IEEE Electron Device Letters, 2020
According to quantum transport simulations, source-to-drain tunneling (SDT) has been recognized as the main cause leading to subthreshold swing (SS) saturation and degradation of short-channel MOSFETs at cryogenic temperatures.
K. Kao, Tzung Rang Wu, Hong-Lin Chen, Wen-Jay Lee, N. Chen, William Cheng-Yu Ma, C. Su, Yao-Jen Lee   +7 more
semanticscholar   +1 more source

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

Journal of Nanoscience and Nanotechnology, 2010
SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires ...
Yanbo, Zhang, Ying, Xiong, Xiang, Yang, Ying, Wang, Weihua, Han, Fuhua, Yang   +5 more
openaire   +2 more sources

Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing

IEEE Transactions on Electron Devices, 2020
Al2O3-passivated Schottky-gate AlGaN/GaN high electron mobility transistors (HEMTs) with improved subthreshold swing (SS) and drain current ON/OFF ratio by postmetallization annealing (PMA) at 500 °C in N2 ambient are reported.
Hsuan-Ping Lee, C. Bayram
semanticscholar   +1 more source

Direct Patterning on Top-Gate Organic Thin-Film Transistors: Improvement of On/Off Ratio, Subthreshold Swing, and Uniformity

IEEE Electron Device Letters, 2020
Indacenodithiophene-co-benzothiadiazole (ID T-BT), diketopyrrolopyrrole-thieno[3,2-b]thiophene (DPPT-TT), and poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4, 5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (N2200) organic thin-film ...
Fanming Huang, Yang Xu, Zhecheng Pan, Wenwu Li, J. Chu   +4 more
semanticscholar   +1 more source

Low Subthreshold Swing HfLaO/Pentacene Organic Thin-Film Transistors

IEEE Electron Device Letters, 2008
We have integrated a high-kappa HfLaO dielectric into pentacene-based organic thin-film transistors. We measured good device performance, such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of -1.3 V, and a field-effect mobility of 0.71cm2/ Vldrs .
M.F. Chang, P.T. Lee, S.P. McAlister, A. Chin   +3 more
openaire   +1 more source

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing

Applied Physics Letters
In this work, we report on the high-performance p-GaN/InGaN/AlN multi-heterostructure p-channel metal–semiconductor field effect transistors (MESFETs) with energy-band modulated quantum well-like InGaN channel and low work function metal tungsten (W) as ...
Huake Su, Tao Zhang, Shengrui Xu, Hongchang Tao, Yuan Gao, Xu Liu, Lei Xie, Peng Xiang, Kai Cheng, Yue Hao, Jincheng Zhang   +10 more
semanticscholar   +1 more source