Results 171 to 180 of about 13,751 (195)

Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022
Ultrathin body exhibits excellent immunity to subthreshold swing (SS) degradation by doping and Dit, approaching the ideal SS of 60mV/dec. Highly stacked Ge0.9Sn0.1 ultrathin bodies down to 2nm are fabricated to achieve record low SS of 64mV/dec and ...
Chung-En Tsai, Chun-Yi Cheng, B. Huang, Hsin-Cheng Lin, Tao-Hsuan Chou, Chien-Te Tu, Yi-Chun Liu, Sun-Rong Jan, Yu-Rui Chen, Wan-Hsuan Hsieh, Kung-Ying Chiu, Shee-Jier Chueh, C. Liu   +12 more
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A Novel Anti-Ferroelectric Negative Capacitance Tunneling Fet with Mitigated Subthreshold Swing Degradation Issue

China Semiconductor Technology International Conference, 2022
In this work, a novel anti-ferroelectric (AFE) negative capacitance tunneling FET (ANC-TFET) is proposed and simulated based on our developed device model. In ANC-TFET, the amplification coefficient (AV) of AFE layer is designed to be increasing when the
Shaodi Xu, Chang Su, Yimei Li, Qianqian Huang, Ruei-Hao Huang   +4 more
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Energy-efficient transistors: suppressing the subthreshold swing below the physical limit.

Materials Horizons, 2021
With the miniaturization of silicon-based electronic components, power consumption is becoming a fundamental issue for micro-nano electronic circuits. The main reason for this is that the scaling of the supply voltage in the ultra-large-scale integrated ...
Yongbiao Zhai, Zihao Feng, Ye Zhou, Su‐Ting Han   +3 more
semanticscholar   +1 more source

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric With Ultralow Subthreshold Swing

IEEE Transactions on Electron Devices, 2021
We report a high-performance transparent amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT) gated by atomic layer deposition (ALD)-deposited HfAlOx.
L. Zhu, Yongli He, Chunsheng Chen, Xiangjing Wang, Ying Zhu, Yixin Zhu, Huiwu Mao, C. Wan, Qing Wan   +8 more
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Vertically-Stacked Si0.2Ge0.8 Nanosheet Tunnel FET With 70 mV/Dec Average Subthreshold Swing

IEEE Electron Device Letters, 2021
A novel CMOS-compatible SiGe Tunnel Field-Effect Transistor (TFET) with a high current drivability is demonstrated, which features a vertically-stacked SiGe nanosheet (NS) with high Ge content and gate-all-around(GAA) structure to improve carrier ...
Ryoongbin Lee, Junil Lee, Kitae Lee, Soyoun Kim, Hyunho Ahn, Sihyun Kim, Hyun-Min Kim, Changha Kim, Jang-Sik Lee, Sangwan Kim, Byung-Gook Park   +10 more
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Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at Cryogenic Temperature

IEEE Electron Devices Technology and Manufacturing Conference, 2021
Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 6.5K. SS is 60.3mV/dec at RT and decreases in proportional to temperature (T), but SS tends to saturate below ...
Shohei Sekiguchi, Min-Ju Ahn, T. Saraya, M. Kobayashi, T. Hiramoto   +4 more
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Transistor Subthreshold Swing Lowered by 2-D Heterostructures

IEEE Transactions on Electron Devices, 2021
Steep-slope transistors are required for low-power electronic applications. However, the strategy to lower the subthreshold swing (SS) remains elusive.
Fan Wu, H. Tian, Zhaoyi Yan, Yang Shen, Jie Ren, Yi Yang, T. Ren   +6 more
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Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences

Small Methods
Amorphous IGZO (a‐IGZO) thin‐film transistors (TFTs) are standard backplane electronics to power active‐matrix organic light‐emitting diode (AMOLED) televisions due to their high carrier mobility and negligible low leakage characteristics.
S. Yoon, Jae Hun Cho, Iaan Cho, Min Jae Kim, J. Hur, Seon Woong Bang, Heung Jo Lee, J. Bae, Jiyoung Kim, Bonggeun Shong, J. Jeong   +10 more
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Modeling of the Subthreshold Swing in Cryogenic MOSFET With the Combination of Gaussian Band Tail and Gaussian Interface State

IEEE Transactions on Electron Devices
To quantitatively describe the inflection and the recently observed protrusion phenomenon in the subthreshold region at cryogenic temperature, this study presents a novel model featuring a Gaussian-distributed band tail, combining the Gaussian interface ...
Xinyi Zhang, Zhicheng Wu, J. Bu, Bo Li, Zhengsheng Han   +4 more
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MoS2/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters

Advanced Functional Materials
In recent years, 2D/3D heterojunction electronic devices have attracted considerable attention. As the size decreases, enhancing the speed of MOSFETs, reducing the subthreshold swing (SS), and lowering the power consumption (P) have become challenging ...
Yao Zhou, Fei Li, Wenfeng Li, Jianru Chen, Jiahao Gao, Jianming Huang, Liang Zhao, Tu Zhao, Jiabin Li, Tao Zheng, Zhidong Pan, Zhaoqiang Zheng, Nengjie Huo, Dongxiang Luo, Mengmeng Yang, Xingfu Wang, Wenlong Chen, Yiming Sun, Wei Gao   +18 more
semanticscholar   +1 more source