Results 161 to 170 of about 361,658 (190)

Amphibian-inspired neuromorphic dynamic vision systems based on ferroelectric field-effect transistor. [PDF]

Nat Commun
Zhai Y, Chen P, Luo Y, Lv Z, Ding G, Yang J, Zheng M, Zhou Y, Chai Y, Han ST.   +9 more
europepmc   +1 more source

Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal Effects. [PDF]

Nanomaterials (Basel)
Yugender P, Singh S, Kumar K, Dhar RS, Seteikin AY, Banerjee A, Samusev IG.   +6 more
europepmc   +1 more source

Design and analysis of NC-FinFET using Pb(Zr_yTi_1-y)O₃ under high ionising radiations. [PDF]

Sci Rep
Tripathi SL, Prakash NN, Yadav AK, Raj B, Wijayanto I.   +4 more
europepmc   +1 more source

Study of Dielectric-Modulated Buried Source Horizontally Double-Gate TFET-Based Biosensors. [PDF]

ACS Omega
Yang J, Ding C, Cui G, Xu H, Peng Y, Wang H, Fan M, Gong D.   +7 more
europepmc   +1 more source

Two Kelvin Operation of Ultrawide-Bandgap β-Ga₂O₃ FinFETs and Logic Inverter Integrated Circuits. [PDF]

Nano Lett
Khandelwal V, Maciel García GI, Kumar M, Blanda F, Xiao N, Zheng D, Mainali G, Rajbhar MK, Tang X, Zhang X, Li X.   +10 more
europepmc   +1 more source

A Symmetric U-Shaped Gate Tunnel FET-ISFET Hybrid Label-Free Biosensor for Highly Sensitive DNA Detection. [PDF]

Sensors (Basel)
An Y, Li Y, Chen S, Wang S, Wen Z, Yang X, Liu H.   +6 more
europepmc   +1 more source

Dynamically Tunable Pseudo-Enhancement-Load Inverters Based on High-Performance InAlZnO Thin-Film Transistors. [PDF]

Nanomaterials (Basel)
Gu H, Xie J, Sun C, Yi T, Zhuo Y, Dong J, Zhao Y, Zhao K.   +7 more
europepmc   +1 more source

All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths. [PDF]

Nat Commun
Zhang Y, Jia X, Chen J, Li M, Li Y, Dai L.   +5 more
europepmc   +1 more source

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Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

IEEE Electron Device Letters, 2007
We have demonstrated a 70-nm n-channel tunneling field-effect transistor (TFET) which has a subthreshold swing (SS) of 52.8 mV/dec at room temperature. It is the first experimental result that shows a sub-60-mV/dec SS in the silicon-based TFETs. Based on simulation results, the gate oxide and silicon-on-insulator layer thicknesses were scaled down to 2
Tsu-Jae Liu, Byung Park, Woo Young Choi   +2 more
exaly   +2 more sources

Analytical relationship between subthreshold swing of thermionic and tunnelling currents

Electronics Letters, 2014
International audienceAn analytical relationship between the subthreshold swing of the thermionic current and the tunnelling current is derived for double-gate metal-oxide semiconductor field-effect transistors (MOSFETs), based on the Wentzel-Kramers ...
Gérard Ghibaudo
exaly   +2 more sources