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Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET
The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve.
Chwan Ying Lee +7 more
exaly +2 more sources
The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS2 field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction ...
Yao Yao, Dayong Zhang, Zhi Jin
exaly +2 more sources
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Semiconductor Science and Technology
Abstract We investigate the physical mechanism linking subthreshold swing (SS) degradation and SS saturation in cryogenic n-type gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). While previous studies attributed SS saturation to source-to-drain direct tunneling (SDDT), we clarify that SDDT alone does ...
Jaehyun Lee +3 more
openaire +1 more source
Abstract We investigate the physical mechanism linking subthreshold swing (SS) degradation and SS saturation in cryogenic n-type gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). While previous studies attributed SS saturation to source-to-drain direct tunneling (SDDT), we clarify that SDDT alone does ...
Jaehyun Lee +3 more
openaire +1 more source
2014 International Conference on Computing for Sustainable Global Development (INDIACom), 2014
Sweta Chander +3 more
openaire +1 more source
Sweta Chander +3 more
openaire +1 more source
Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors
IEEE Electron Device Letters, 2020Farzan Jazaeri +2 more
exaly
Modeling the subthreshold swing in MOSFET's
IEEE Electron Device Letters, 1997P Jansen, L Deferm
exaly
Study of the subthreshold swing of a pMOSFET as a dosimetric parameter
Sensors and Actuators A: Physical, 2012J Banqueri, M A Carvajal, A J Palma
exaly

