Results 151 to 160 of about 361,658 (190)

Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide. [PDF]

Nat Commun
Liu M, Niu J, Yang G, Zhao R, Chen K, Lu W, Liao F, Wu Z, Jiang C, Geng D, Lu N, Nathan A, Li L, Li L, Liu M.   +14 more
europepmc   +1 more source

High-Indium-Composition, Ultra-Low-Power GaAsSb/InGaAs Heterojunction Tunnel Field-Effect Transistors. [PDF]

Micromachines (Basel)
Liu Y, Li X, Zhang DH, Fan MQ, Wang XP, Jin YJ.   +5 more
europepmc   +1 more source

Hysteresis-Induced Performance Variations and Interfacial Charge Trapping Characteristics in Carbon Nanotube Thin-Film Transistors. [PDF]

Nanomaterials (Basel)
Liu M, Lai B, Wang H, Wu L, Wu W, Xu K, Zhao Y.   +6 more
europepmc   +1 more source

Fabrication and Electrical Characterization of MgZnO/ZTO Thin-Film Transistors. [PDF]

Nanomaterials (Basel)
Hao Y, Wang C, Guo L, Sun Y, Jin M, Xu L, Huang Y, Zong Y, Xu X, Zeng J.   +9 more
europepmc   +1 more source

Chip-Scale Graphene/IGZO Cold Source FET Array Enabling Sub-60 mV dec^-1 Super-Steep Subthreshold Swing. [PDF]

Adv Mater
Oh S, Kwon O, Yoon J, Cho E, Kim MJ, Seo W, Kim M, Kim S, Kwon Y, Jung YJ, Kang K, Park W, Kim Y, Cho B.   +13 more
europepmc   +1 more source

Solution-Processed Low-Voltage-Driven Phototransistors Using Colloidal ZnSnO₃ Nanocrystal. [PDF]

Chem Asian J
Yadav AK, Dahiya S, Pandey U, Aich PK, Chetri P, Das A, Pal BN.   +6 more
europepmc   +1 more source

High-κ KBe₂BO₃F₂ dielectric material with wide bandgap for two-dimensional electronics. [PDF]

Nat Commun
Xu Y, Liu K, Peng G, Liu T, Sun L, Xiong X, Wu Y, Sun H, Bai X, Zhu Y, Xiao Z, Li H, Zhai T.   +12 more
europepmc   +1 more source

Efficient Automatic Design of a 2D TMD FET via Machine Learning-Assisted TCAD Simulation. [PDF]

Micromachines (Basel)
Shi N, Wei ZJ, Wu T.
europepmc   +1 more source

A Stepped-Spacer FinFET Design for Enhanced Device Performance in FPGA Applications. [PDF]

Micromachines (Basel)
Zareiee M, Mehrad M, Tawfik A.
europepmc   +1 more source

<i>Ab initio</i> quantum transport investigation of Sub-3 nm β-InSe transistors for future high-performance nanoelectronics. [PDF]

RSC Adv
Ghafoor M, Khan R, Din SU, Safeen A, Li Q, Yang X, Yang Z, Lu J.   +7 more
europepmc   +1 more source