Results 181 to 190 of about 13,751 (195)

Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures

Applied Physics Letters
This study presents a comprehensive investigation of the electrical properties of p-GaN gate HEMT devices under cryogenic operations, spanning a temperature range from 300 K all the way down to 10 K.
Shivendra Kumar Singh, Thien Sao Ngo, Tian-Li Wu, Y. Chauhan   +3 more
semanticscholar   +1 more source

6‐2: High Subthreshold Swing a‐IGZO Driving TFTs Without Mobility Degradationfor Low‐Gray Level Image Quality Improvement in Active‐Matrix OLED

SID Symposium Digest of Technical Papers
In this paper, high subthreshold swing (SS) amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors (TFTs) were fabricated using a sputtered Al2O3 layer, which was deposited on an active layer of the conventional bottom‐gate a‐IGZO TFTs and patterned using ...
Soobin An, Junhyeong Park, Jinkyu Lee, Yumin Yun, Soo‐Yeon Lee   +4 more
semanticscholar   +1 more source

Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering

Applied Physics Letters
Low power consumption and stable performance insensitive to power supply are highly required for field-effect transistors integrated in portable technologies.
Kunyi Liu, Fei Lu, Yuan Li
semanticscholar   +1 more source

Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K

IEEE Transactions on Electron Devices
This work, for the first time, delves into and elucidates the underlying mechanism of subthreshold swing (SS) saturation in cryogenic InGaAs high electron mobility transistors (HEMTs).
Jaeyong Jeong, Jongmin Kim, Jisung Lee, Yoon-Je Suh, Nahyun Rheem, S. Kim, Juhyuk Park, Bongho Kim, J. Kim, Seung-Young Park, Sanghyeon Kim   +10 more
semanticscholar   +1 more source

Circular‐Gate Nanoscale Air Channel Transistors: Achieving ultralow Subthreshold Swing and Working Voltage

Advancement of science
As electronics advance toward higher performance and adaptability in extreme environments, traditional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) face challenges due to physical constraints such as Boltzmann's law and short‐channel ...
Haiquan Zhao, Feiliang Chen, Yazhou Wei, Lixin Sun, Ruihan Huang, Xiangdong Wang, Fan Yang, Hao Jiang, Yang Liu, Mo Li, Jian Zhang   +10 more
semanticscholar   +1 more source

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

IEEE Electron Device Letters, 2020
We report high performance amorphous Indium-Gallium-Zinc-Oxide ( ${a}$ -IGZO) thin-film transis- tors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving subthreshold swing (SS) of 70.2 mV/decade, high effective mobility ...
S. Samanta, U. Chand, Shengqiang Xu, Kaizhen Han, Ying Wu, Chengkuan Wang, Annie Kumar, Hasita Velluri, Yida Li, Xuanyao Fong, A. Thean, X. Gong   +11 more
semanticscholar   +1 more source

Record‐Low Subthreshold‐Swing Negative‐Capacitance 2D Field‐Effect Transistors

Advances in Materials, 2020
Power consumption is one of the most challenging bottlenecks for complementary metal‐oxide–semiconductor integration. Negative‐capacitance field‐effect transistors (NC‐FETs) offer a promising platform to break the thermionic limit defined by the ...
Yang Wang, Xiaoyuan Bai, Junwei Chu, Hongbo Wang, G. Rao, Xinqiang Pan, Xinchuan Du, Kai Hu, Xuepeng Wang, Chuanhui Gong, Chujun Yin, Chao Yang, Chaoyi Yan, Chunyan Wu, Y. Shuai, Xianfu Wang, Min Liao, J. Xiong   +17 more
semanticscholar   +1 more source

Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures

IEEE Electron Device Letters, 2020
According to quantum transport simulations, source-to-drain tunneling (SDT) has been recognized as the main cause leading to subthreshold swing (SS) saturation and degradation of short-channel MOSFETs at cryogenic temperatures.
K. Kao, Tzung Rang Wu, Hong-Lin Chen, Wen-Jay Lee, N. Chen, William Cheng-Yu Ma, C. Su, Yao-Jen Lee   +7 more
semanticscholar   +1 more source

Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing

IEEE Transactions on Electron Devices, 2020
Al2O3-passivated Schottky-gate AlGaN/GaN high electron mobility transistors (HEMTs) with improved subthreshold swing (SS) and drain current ON/OFF ratio by postmetallization annealing (PMA) at 500 °C in N2 ambient are reported.
Hsuan-Ping Lee, C. Bayram
semanticscholar   +1 more source

Nanotube Tunneling FET With a Core Source for Ultrasteep Subthreshold Swing: A Simulation Study

IEEE Transactions on Electron Devices, 2019
In this article, we propose a novel nanotube (NT) tunneling field-effect transistor with a core source (CSNT-TFET) which uses line tunneling. We systematically investigate the CSNT-TFET with the help of calibrated 3-D simulations and demonstrate that it ...
Gaurav Musalgaonkar, Shubham Sahay, R. Saxena, M. J. Kumar   +3 more
semanticscholar   +1 more source