Results 241 to 250 of about 238,540 (305)

Ultrasensitive Anti‐Stokes Luminescence Thermometry in Transition Metal Dichalcogenide Monolayers

Advanced Functional Materials, EarlyView.
We demonstrate a highly sensitive nanothermometer using anti‐Stokes photoluminescence, also known as photoluminescence upconversion (UPL), in monolayer tungsten disulfide. A strong resonantly enhanced UPL is observed, confirming the central role of optical phonons in the PL upconversion mechanism.
Sharada Nagarkar, Fahrettin Sarcan, Elanur Hut, Emiliano R. Martins, Stuart A. Cavill, Thomas F. Krauss, Yue Wang   +6 more
wiley   +1 more source

Designing Magnetic Topological Insulator Trilayers for Highly Efficient Spin-Orbit Torque Switching. [PDF]

Nano Lett
Zhou LJ, Zhuo D, Tay H, Yan ZJ, Xiao P, Liu X, Zhang B, Chang CZ.   +7 more
europepmc   +1 more source

Glissile Interphase Boundaries Enable Collective Phase Switching in Epitaxial Polar Oxides

Advanced Functional Materials, EarlyView.
A triple point is identified in the phase diagram of low‐symmetry epitaxial BiFeO3 thin film along with an extended regime of phase competition associated with a flattened energy landscape. The electromechanical response is shown to be governed by correlated interphase‐boundary motion, including scale‐free avalanche dynamics characteristic of systems ...
Mohammad Moein Seyfouri, Oliver Paull, Ralph Bulanadi, Yasuhiro Sakamoto, Shintaro Yasui, Mikayla Lord, Mahak Chhabra, David Walker, Patrycja Paruch, Shery Chang, Nagarajan Valanoor, Daniel Sando   +11 more
wiley   +1 more source

A spin-orbit torque-based key generation system with key concealment and attack detection through irreversible physical changes. [PDF]

Sci Adv
Xu Y, Duan W, Wu H, Wang Y, Qin T, Zhang S, Guo Z, Wan M, Song M, You L.   +9 more
europepmc   +1 more source

Symmetry-locked six-state control of altermagnetism via sliding ferroelectricity. [PDF]

Sci Adv
Sun W, Wang W, Yang C, Huang S, Cheng Z.
europepmc   +1 more source

A generic compact model for resistive memories and switches. [PDF]

Sci Rep
Jung S, Kim H, Park J, Kim S, Kim MH.
europepmc   +1 more source

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Electronics (Switzerland), 2015
Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e ...
Ee Wah Lim, Razali Ismail, Ismail Razali   +2 more
exaly   +2 more sources

A Mechanism for microRNA Arm Switching Regulated by Uridylation

Molecular Cell, 2020
© 2020 Elsevier Inc. Strand selection is a critical step in microRNA (miRNA) biogenesis. Although the dominant strand may change depending on cellular contexts, the molecular mechanism and physiological significance of such alternative strand selection ...
Haedong Kim, Jimi Kim, Sha Yu
exaly   +2 more sources