Results 161 to 170 of about 7,892 (272)

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R‐MoS2 for Polarization‐Dependent Reconfigurable Optoelectronic Synapses

open access: yesAdvanced Science, EarlyView.
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue   +11 more
wiley   +1 more source

Origin of Single-Molecule Reaction Chirality. [PDF]

open access: yesResearch (Wash D C)
Yang C   +10 more
europepmc   +1 more source

Vapor‐Assisted Catalysis Enables Precise Construction of MOF‐Derived Hierarchical Carbon Nanoarrays for High‐Performance Supercapacitors

open access: yesAdvanced Science, EarlyView.
A remote‐control strategy for catalyst design is unveiled for advanced carbon materials. During pyrolysis, zinc vapor from a physically separate source guides cobalt catalysts to construct a hierarchical carbon nanoarray. This approach prevents structural collapse while directing the dense growth of carbon nanotubes, yielding a material with ...
Xiaoyang Deng   +7 more
wiley   +1 more source

Topological Materials and Related Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti   +9 more
wiley   +1 more source

A Clarification on Quantum-Metric-Induced Nonlinear Transport. [PDF]

open access: yesAdv Sci (Weinh)
Qiang XB, Liu T, Gao ZX, Lu HZ, Xie XC.
europepmc   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

open access: yesAdvanced Electronic Materials, EarlyView.
Room‐temperature sliding ferroelectricity in γ‐InSe enables a two‐dimensional FeFET with a 6.8 V memory window, above 104 conductance modulation, longer than 10‐years retention and above 103 cycles fatigue resistance. An ultrathin (4.8 nm) γ‐InSe ferroelectric tunnel junction exhibits reversible high/low resistance switching with TER of 105 at room ...
Yue Li   +7 more
wiley   +1 more source

Stretchable Energy Storage with Eutectic Gallium Indium Alloy

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
A highly stretchable liquid metal‐based electrode is developed via a one‐step process, retaining conductivity and capacitance after mechanical deformation up to 900% strain. The stretchable all‐solid‐state device provides a areal energy density of 43 µWh cm⁻2 after 150% strain.
Adit Gupta   +6 more
wiley   +1 more source

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