Results 181 to 190 of about 84,713 (260)

Cation‐Driven Valence Change Mechanism in 2D AgCrS2 for Ultralow‐Power and Reliable Memristors

Advanced Science, EarlyView.
A 2D AgCrS2 volatile memristor is shown to switch via a cation‐driven valence change mechanism, where Ag+ reversibly intercalates into tetrahedral vacancies between CrS2 layers to form a conductive Ag2CrS2 pathway without elemental Ag metallization. The device exhibits 0.2 V switching, nA‐compliance power down to 200 pW, and endurance beyond 3 × 105 ...
Yueqi Su, Minghao Wang, Xiaolin Tai, Yuhua Liu, Yue Lin, Yuqiao Guo, Jing Peng, Yi Xie, Changzheng Wu   +8 more
wiley   +1 more source

Artificial Synaptic Devices for Neuromorphic Systems

Physics and High Technology, 2019
openaire   +1 more source

Single‐Crystal PZT‐Driven Organic Piezo‐Phototronic Adaptive Transistors Toward Advanced Spatiotemporal Visual Computing

Advanced Science, EarlyView.
Here, we propose a single‐crystal PZT‐based piezo‐phototronic organic adaptive memory transistor (OAMT), achieving a record memory window capacity factor (γ) of 0.87 at a low SS of 200 mV/decade via efficient multi‐field control. The device achieves a high recognition accuracy ∼ 90% in neuromorphic simulations, demonstrates robust fault tolerance under
Chenhao Xu, Xingyu Cao, Zewen Li, Shifu Xiong, Yongxu Hu, Zhongwu Wang, Yujie Yuan, Lei Zheng, Wenping Hu   +8 more
wiley   +1 more source

Polarizable Thiol-Ene Cross-Linked Nitrile Dielectrics for Stretchable Low-Voltage Neuromorphic Transistors with Acoustic Classification. [PDF]

ACS Appl Mater Interfaces
Liu CJ, Hsiao SW, Chen QG, Hong QA, Lin YT, Chueh CC, Ng CT, Chang TT, Kim SH, Chiu YC, Lee WY.   +10 more
europepmc   +1 more source

Leaky‐Integrate‐Fire Neuron via Synthetic Antiferromagnetic Coupling and Spin‐Orbit Torque

Advanced Science, EarlyView.
A spintronic leaky‐integrate‐and‐fire neuron is realized using Spin Orbit Torque driven domain‐wall motion for integration and synthetic antiferromagnetic coupling for the leaky process. The specialized Hall‐bar geometry enables controlled DW dynamics, achieving repeatable integration and firing events. This compact, CMOS‐compatible design highlights a
Badsha Sekh, Durgesh Kumar, Hasibur Rahaman, Ravi Shankar Verma, Ramu Maddu, Jianpeng Chan, Wai Lum William Mah, Stuart S. P. Parkin, S. N. Piramanayagam   +8 more
wiley   +1 more source

Gate insulator stack engineering for fully CMOS-compatible reservoir computing. [PDF]

Nano Converg
Hwang J, Park MK, Kim J, Bae JH, Lee JH.
europepmc   +1 more source

Engineering Immune Cell to Counteract Aging and Aging‐Associated Diseases

Advanced Science, EarlyView.
This review highlights a paradigm shift in which advanced immune cell therapies, initially developed for cancer, are now being harnessed to combat aging. By engineering immune cells to selectively clear senescent cells and remodel pro‐inflammatory tissue microenvironments, these strategies offer a novel and powerful approach to delay age‐related ...
Jianhua Guo, Lanjie Lei, Ying Jin, Lan Su, Shumao Cui, Liyun Shi   +5 more
wiley   +1 more source

Multisensory Neuromorphic Devices: From Physics to Integration. [PDF]

Nanomicro Lett
Gui A, Mu H, Yang R, Zhang G, Lin S.
europepmc   +1 more source

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

Advanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang, Yuxiang Yang, Baiqian Wang, Yaoyu Tao, Zelun Pan, Lei Cai, Teng Zhang, Longhao Yan, Xianbin Li, Yuchao Yang   +9 more
wiley   +1 more source

All‐Optical Control of Bidirectional Polarization Switching in Ferroelectric Heterostructures for Neuromorphic and In‐Memory Computing

Advanced Science, EarlyView.
We propose an optical ferroelectric field‐effect transistor, composed of a MoS2/CIPS heterostructure, demonstrates the feasibility of all‐optical nonvolatile memory, neuromorphic computing, and logic‐in‐memory operations. The device exhibits reversible light‐controlled memory states, retina‐like synaptic plasticity, and wavelength‐selective ...
Jingjie Niu, Jiahui Lyu, Jie Li, Koyal Suman Samantaray, Cheolhwa Jang, Yoonmyung Lee, Ji‐Sang Park, Sungjoo Lee   +7 more
wiley   +1 more source