Results 11 to 20 of about 24,214 (199)

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling. [PDF]

Small
AI‐enabled semiconductor scaling law. Virtualization emerges as an AI‐enabled scaling law for semiconductors, where progress depends on replacing physical iteration with credible virtual evidence. Surrogate modeling accelerates design‐space exploration, digital twins virtualize process learning, and defect‐to‐reliability inference advances ...
Wang Z, Chen X, Lin F, Li X, Wang F, Guo S, Yu S, Li L, Huang JK.   +8 more
europepmc   +2 more sources

Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning

Micromachines, 2023
In this study, the device characteristics of silicon nanowire feedback field-effect transistors were predicted using technology computer-aided design (TCAD)-augmented machine learning (TCAD-ML).
Sola Woo, Juhee Jeon, Sangsig Kim
doaj   +1 more source

A device-level characterization approach to quantify the impacts of different random variation sources in FinFET technology [PDF]

, 2016
A simple device-level characterization approach to quantitatively evaluate the impacts of different random variation sources in FinFETs is proposed. The impacts of random dopant fluctuation are negligible for FinFETs with lightly doped channel, leaving ...
Asenov, Asen, Cheng, Binjie, Guo, Shaofeng, Huang, Ru, Jiang, Xiaobo, Wang, Runsheng, Wang, Xingsheng   +6 more
core   +2 more sources

TCAD 2D numerical simulations for increasing efficiency of AlGaAs – GaAs Solar Cells

Revista de I + D Tecnológico, 2018
The performance of solar cells has improved quickly in recent years, the latest research focuses on thin cells, multijunction cells, solar cells of the group III-V compounds, Tandem cells, etc.
César Palacios A., Noemi Guerra, Marco Guevara, María José López   +3 more
doaj   +1 more source

Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements [PDF]

, 2010
The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements.
Girard, Sylvain, Goiffon, Vincent, Magnan, Pierre, Paillet, Philippe, Virmontois, Cédric   +4 more
core   +4 more sources

TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration

IEEE Journal of the Electron Devices Society, 2020
This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-ML) framework to assist the analysis of device-to-device variation and operating (ambient) temperature without the need of physical quantities extraction.
Hiu Yung Wong, Ming Xiao, Boyan Wang, Yan Ka Chiu, Xiaodong Yan, Jiahui Ma, Kohei Sasaki, Han Wang, Yuhao Zhang   +8 more
doaj   +1 more source

Simulation Based DC and Dynamic Behaviour Characterization of Z2FET [PDF]

, 2017
This work presents a TCAD investigation of the operation of a Z2FET device for memory application, where the TCAD model is well calibrated to experimental hysteresis curves.
Adamu-Lema, Fikru, Asenov, Asen, Cheng, Binjie, Duan, Meng, Gamiz, Francisco, Georgiev, Vihar, Millar, Campbell, Navarro, Carlos, Wang, Xingsheng   +8 more
core   +1 more source

ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation

IEEE Journal of the Electron Devices Society, 2021
Electrostatic discharge (ESD) protection is a grand design challenge for complex ICs in advanced technologies. ESD simulation is indispensable to guide ESD protection designs.
Mengfu Di, Zijin Pan, Cheng Li, Albert Wang   +3 more
doaj   +1 more source

3D TCAD Analysis Enabling ESD Layout Design Optimization

IEEE Journal of the Electron Devices Society, 2020
On-chip electrostatic discharge (ESD) protection design for integrated circuits (ICs) is a challenging design-for-reliability problem. Since ESD events involve very high current transients in very short time period, current crowding is unavoidable, which
Zijin Pan, Cheng Li, Mengfu Di, Feilong Zhang, Albert Wang   +4 more
doaj   +1 more source

Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment

Micromachines, 2023
The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures.
Fuxing Li, Changchun Chai, Yuqian Liu, Yanxing Song, Lei Wang, Yintang Yang   +5 more
doaj   +1 more source