Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems. [PDF]
Adv Sci (Weinh)This article presents a holistic investigation of M3D‐compatible oxide semiconductor technology using PEALD‐fabricated IGZO TFTs, spanning device‐level characterization, TCAD Modeling, circuit design, and scaled‐node projections. It demonstrates high field‐effect mobility (up to 116.35 cm2 V−1·s−1), robust reliability (△VTH < 0.15 V), low variation ...
Wang W +11 more
europepmc +2 more sources
Effect of Mask Geometry Variation on Plasma Etching Profiles
Micromachines, 2023 It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room at the top”. The
Josip Bobinac +8 more
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The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy
IEEE Access, 2020 We present numerical methods to enable accurate and robust level-set based simulation of anisotropic wet etching and non-planar epitaxy for semiconductor fabrication.
Alexander Toifl +6 more
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Micromachines, 2023 In this study, the device characteristics of silicon nanowire feedback field-effect transistors were predicted using technology computer-aided design (TCAD)-augmented machine learning (TCAD-ML).
Sola Woo, Juhee Jeon, Sangsig Kim
doaj +1 more source
TCAD 2D numerical simulations for increasing efficiency of AlGaAs – GaAs Solar Cells
Revista de I + D Tecnológico, 2018 The performance of solar cells has improved quickly in recent years, the latest research focuses on thin cells, multijunction cells, solar cells of the group III-V compounds, Tandem cells, etc.
César Palacios A. +3 more
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A device-level characterization approach to quantify the impacts of different random variation sources in FinFET technology [PDF]
, 2016 A simple device-level characterization approach to quantitatively evaluate the impacts of different random variation sources in FinFETs is proposed. The impacts of random dopant fluctuation are negligible for FinFETs with lightly doped channel, leaving ...
Asenov, Asen +6 more
core +2 more sources
IEEE Journal of the Electron Devices Society, 2020 This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-ML) framework to assist the analysis of device-to-device variation and operating (ambient) temperature without the need of physical quantities extraction.
Hiu Yung Wong +8 more
doaj +1 more source
Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements [PDF]
, 2010 The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements.
Girard, Sylvain +4 more
core +4 more sources
ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation
IEEE Journal of the Electron Devices Society, 2021 Electrostatic discharge (ESD) protection is a grand design challenge for complex ICs in advanced technologies. ESD simulation is indispensable to guide ESD protection designs.
Mengfu Di +3 more
doaj +1 more source
3D TCAD Analysis Enabling ESD Layout Design Optimization
IEEE Journal of the Electron Devices Society, 2020 On-chip electrostatic discharge (ESD) protection design for integrated circuits (ICs) is a challenging design-for-reliability problem. Since ESD events involve very high current transients in very short time period, current crowding is unavoidable, which
Zijin Pan +4 more
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