Results 31 to 40 of about 11,517 (220)
Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies ...
Mischa Thesberg +7 more
doaj +1 more source
TCAD device modelling and simulation of wide bandgap power semiconductors [PDF]
Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap ...
Samuel Perkins +8 more
core +1 more source
The limited efficacy of existing antiviral therapies for influenza--coupled with widespread baseline antiviral resistance--highlights the urgent need for more effective therapy.
Jack T Nguyen +6 more
doaj +1 more source
TCAD Sensitivity Analysis for Device Optimization
We explore the use of sensitivity analysis for technology computer-aided design (TCAD) optimization. By directly coupling device response to model parameters, our approach may be used to generate derivatives for gradient-based optimization. An example is
Sanchez, Juan
core +1 more source
A machine learning (ML) model by combing two autoencoders and one linear regression model is proposed to avoid overfitting and to improve the accuracy of Technology Computer-Aided Design (TCAD)-augmented ML for semiconductor structural variation ...
Kashyap Mehta +5 more
doaj +1 more source
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee +4 more
wiley +1 more source
Implementation of TCAD-labeled ASMT.
(a) The dataset is split into the training set and test set. (b) The baseline model is trained with the experimentally labeled data. (c) The TCAD-labeled ASMT model is trained with the experimentally labeled and TCAD-labeled data.
Chandni Akbar (7224920) +8 more
core +1 more source
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
Fabrication and Simulating Solar Cell Devices using Silvaco TCAD Tools [PDF]
Solar cells are p-i-n photodiodes, which are operated under forward bias. The intention is to convert the incoming optical power into electrical power with maximum efficiency. In this paper we are going to design a solar cell and simulation of solar cell
Srivastava, Anand Kumar +1 more
core +1 more source

