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TCAD EIC Message: February 2019 [PDF]
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2019 As we close out the year 2018, it is time to reflect back a number of milestones achieved throughout the year. The transition to the new EIC and team included a 50-member editorial board with 19 new members selected after an extensive round of open call for editorial board nominations.
Brisk, Philip +5 more
openaire +3 more sources
MicromachinesAmorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies ...
Mischa Thesberg +7 more
doaj +1 more source
AIP Advances, 2021 The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations.
Mohamed Bouslama +4 more
doaj +1 more source
Optimizing floating guard ring designs for FASPAX N-in-P silicon sensors
, 2016 FASPAX (Fermi-Argonne Semiconducting Pixel Array X-ray detector) is being developed as a fast integrating area detector with wide dynamic range for time resolved applications at the upgraded Advanced Photon Source (APS.) A burst mode detector with ...
Bradford, Robert +6 more
core +1 more source
PLoS ONE, 2011 Widespread resistance among circulating influenza A strains to at least one of the anti-influenza drugs is a major public health concern. A triple combination antiviral drug (TCAD) regimen comprised of amantadine, oseltamivir, and ribavirin has been ...
Justin D Hoopes +8 more
doaj +1 more source
, 2014 The LHC accelerator complex will be upgraded between 2020-2022, to the High-Luminosity-LHC, to considerably increase statistics for the various physics analyses.
Dinu, N. +3 more
core +3 more sources
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +2 more
core +1 more source
Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
Advanced Materials Technologies, EarlyView.This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
wiley +1 more source
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
doaj +1 more source
Charge transport in semiconductors assembled from nanocrystal quantum dots
Nature Communications, 2020 While efficiency of nanocrystal-based devices has improved, charge transport within semiconductors assembled from nanocrystal quantum dots has remained unclear.
Nuri Yazdani +9 more
doaj +1 more source