Results 31 to 40 of about 9,307 (224)

3D TCAD modeling of NO2CNT FET sensors [PDF]

, 2018
A new approach for TCAD modeling of CNT FET gas sensors is presented, whose key feature is the use of an effective Gaussian DOS to mimic the 1D CNT DOS. The TCAD procedure has been applied to the simulation of a suspended CNT FET for NO2sensing.
Sebastian Eberle, Roman, Cosmin, Gnani, Elena, Hierold, Christofer, Eberle, Sebastian, Stefania Carapezzi, Cosmin Roman, Christofer Hierold, Elena Gnani, Reggiani, Susanna, Carapezzi, Stefania, Gnudi, Antonio, Susanna Reggiani, Antonio Gnudi   +13 more
core   +1 more source

Large-signal device simulation in time- and frequency-domain: a comparison [PDF]

, 2008
The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator.
Bonani, Fabrizio, Francesco Bertazzi, Giovanni Ghione, Ghione, Giovanni, Donati Guerrieri, Simona, Simona Donati Guerrieri, Bertazzi, Francesco, Fabrizio Bonani   +7 more
core   +1 more source

TCAD device modelling and simulation of wide bandgap power semiconductors [PDF]

, 2018
Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap ...
Samuel Perkins, Lophitis, Neo, Antoniou, Marina, Arvanitopoulos, Anastasios, Neophytos Lophitis, Marina Antoniou, Anastasios Arvanitopoulos, Perkins, Samuel, Lophitis, Neophytos   +8 more
core   +1 more source

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Micromachines
Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies ...
Mischa Thesberg, Franz Schanovsky, Ying Zhao, Markus Karner, Jose Maria Gonzalez-Medina, Zlatan Stanojević, Adrian Chasin, Gerhard Rzepa   +7 more
doaj   +1 more source

tcad-artifact

, 2023
artifact
openaire   +1 more source

TCAD Sensitivity Analysis for Device Optimization

, 2009
We explore the use of sensitivity analysis for technology computer-aided design (TCAD) optimization. By directly coupling device response to model parameters, our approach may be used to generate derivatives for gradient-based optimization. An example is
Sanchez, Juan
core   +1 more source

Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

AIP Advances, 2021
The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations.
Mohamed Bouslama, P. Vigneshwara Raja, Florent Gaillard, Raphael Sommet, Jean-Christophe Nallatamby   +4 more
doaj   +1 more source

Triple combination antiviral drug (TCAD) composed of amantadine, oseltamivir, and ribavirin impedes the selection of drug-resistant influenza A virus.

PLoS ONE, 2011
Widespread resistance among circulating influenza A strains to at least one of the anti-influenza drugs is a major public health concern. A triple combination antiviral drug (TCAD) regimen comprised of amantadine, oseltamivir, and ribavirin has been ...
Justin D Hoopes, Elizabeth M Driebe, Erin Kelley, David M Engelthaler, Paul S Keim, Alan S Perelson, Libin Rong, Gregory T Went, Jack T Nguyen   +8 more
doaj   +1 more source

Bias‐Tunable Two‐Terminal Organic Photodetector for Intelligent Imaging

Advanced Science, EarlyView.
A vertically stacked two‐terminal photodetector with a symmetric donor–acceptor–donor trilayer active exhibits reconfigurable photoresponse with bias‐tunable magnitude and polarity, together with sub‐millisecond response speed and a wide tunable output window.
Sangin Hahn, Sanghoon Park, Seunghyup Yoo   +2 more
wiley   +1 more source

Implementation of TCAD-labeled ASMT.

, 2019
(a) The dataset is split into the training set and test set. (b) The baseline model is trained with the experimentally labeled data. (c) The TCAD-labeled ASMT model is trained with the experimentally labeled and TCAD-labeled data.
Chandni Akbar (7224920), Rajat Butola (7224932), Parag Parashar (7224914), Chun Han Chen (7224917), Albert S. Lin (7224938), Tejender S. Rawat (7224926), Shih Han Chen (7224935), Sze Ming Fu (7224923), Sparsh Pratik (7224929)   +8 more
core   +1 more source