Results 51 to 60 of about 11,517 (220)
Charge transport in semiconductors assembled from nanocrystal quantum dots
Nature Communications, 2020 While efficiency of nanocrystal-based devices has improved, charge transport within semiconductors assembled from nanocrystal quantum dots has remained unclear.
Nuri Yazdani +9 more
doaj +1 more source
AIP Advances, 2021 The electron trapping in AlGaN/GaN high-electron mobility transistors (HEMTs) with iron (Fe)-doped buffer is investigated through Drain Current Transient (DCT) measurements and TCAD physics-based 2D device simulations.
Mohamed Bouslama +4 more
doaj +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Advanced Electronic Materials, EarlyView.Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
Design Decoupling of Inner- and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling
IEEE Journal of the Electron Devices SocietyUsing a full design-technology-co-optimization (DTCO) methodology, we show the advantages of design decoupling of inner - and outer-gates in gate-all-around nanosheet FETs.
Krishna K. Bhuwalka +7 more
doaj +1 more source
Balancing Carrier Cooling in InN/GaN Quantum Wells via Point Defect Engineering
Advanced Electronic Materials, EarlyView.Nitrogen vacancies in the InN/GaN interface regulate carrier relaxation in polar quantum wells by reconstructing the conduction‐band decay pathway and enhancing nonadiabatic coupling. No deep midgap state is introduced in the neutral single‐vacancy model, enabling faster hot‐electron cooling, improved electron‐hole balance, reduced electron overflow ...
Yuxin Yang +5 more
wiley +1 more source
Advanced Intelligent Discovery, EarlyView.This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath +4 more
wiley +1 more source
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
doaj +1 more source
Advanced Intelligent Systems, EarlyView.A two‐terminal IGZO memtransistor enabling low‐voltage operation is demonstrated through coupling enhancement. By utilizing drain‐induced Fowler–Nordheim tunneling, the device achieves programming below 10 V with a large memory window and high on/off ratio.
Junhyeong Park +5 more
wiley +1 more source
Expanding TCAD Simulations from Grid to Cloud [PDF]
, 2020 -In this work, the distribution, execution and performance of TCAD simulations on grid and cloud systems are investigated. A module for distributed computing which can uniformly interface both grid and cloud computing systems has been implemented within ...
H Demel +4 more
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