Results 61 to 70 of about 9,307 (224)
Materials OpenThis paper investigates a comparative analysis of technology computer-aided design (TCAD) versus machine learning (ML) technique for ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET), which shows the low power ...
Abhay Pratap Singh +2 more
doaj +1 more source
SiC resistive X‐ray beam monitor for intensity and position control of synchrotron light
Journal of Synchrotron Radiation, EarlyView.The characterization of a silicon carbide free‐standing membrane resistive detector for spot‐size‐independent X‐ray beam position monitoring in transmission is presented.A silicon carbide (SiC) X‐ray beam position monitor is presented, based on a resistive charge‐division principle derived from lateral‐effect photodiodes and specifically adapted for ...
Gabriele Trovato +7 more
wiley +1 more source
Application of Noise to Avoid Overfitting in TCAD Augmented Machine Learning
, 2020 In this paper, we propose and study the use of noise to avoid the overfitting issue in Technology Computer-Aided Design-augmented machine learning (TCAD-ML).
Zhang, Yuhao +11 more
core +1 more source
Journal of Advanced Nursing, EarlyView.ABSTRACT Aim To critically reflect on a transnational, clinically embedded doctoral journey undertaken during and after the COVID‐19 pandemic, and to draw conceptual and systemic lessons for doctoral education and clinical academic nursing pathways. Background Reflective accounts of doctoral study exist, yet few examine practice‐based PhDs conducted ...
Gideon U. Johnson
wiley +1 more source
TCAD simulation of thermally evaporated germanium
, 2014 Epitaxial growth of germanium on silicon produces large misfit and threading dislocation densities which dramatically affect electronic properties of Ge. For this reason, TCAD standard models and parameters, optimized for bulk Ge, fail when applied to Ge
COLACE, Lorenzo +3 more
core +1 more source
Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor
physica status solidi (a), Volume 223, Issue 11, 10 June 2026.We introduce a diamond optically gated field effect transistor (DOGFET) which combines high‐speed high‐power operation with exotic single transistor memory. The transistor uses deep level donor type nitrogen traps in type 1b diamond that are optically excited to enable electrostatic gating of the device.
Soumak Nandi +9 more
wiley +1 more source
Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
Advanced Materials Technologies, Volume 11, Issue 11, 5 June 2026.This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
wiley +1 more source
TCAD Modeling of Strain-Engineered MOSFETs
, 2006 The rapid rise of standby power in nanoscale MOSFETs is slowing classical scaling and threatening to derail continued improvements in MOSFET performance.
Lee Smith
core +1 more source
Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD
, 2020 International audienceAbstract In this paper, a comprehensive comparison of TFET simulations using two TCAD simulators, Sentaurus and Silvaco TCAD, is presented.
Ragai, Hani +4 more
core +1 more source
Crystallographic Analysis of a Nonvolatile HZO Phase Shifter Integrated on a Si3N4 Waveguide
Advanced Electronic Materials, Volume 12, Issue 11, 8 June 2026.The nonvolatile resonance shift of an in‐plane HZO phase shifter integrated on a Si3N4 ring resonator is demonstrated through optical measurements under lateral bias. Combining 4D‐STEM with DFT simulations reveals phase redistribution and strain‐induced index changes as the microscopic origin of a nonvolatile photonic modulation.
Minsik Kong +5 more
wiley +1 more source