Results 61 to 70 of about 24,792 (217)
Radiation Hardness Studies in a CCD with High-Speed Column Parallel Readout
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles.
+22 more
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Investigation of charge collection in a CdTe-Timepix detector [PDF]
Energy calibration of CdTe detectors is usually done using known reference sources disregarding the exact amount of charge that is collected in the pixels. However, to compare detector and detector model the quantity of charge collected is needed.
Fröjdh, C. +5 more
core +1 more source
Numerical simulations were employed to boost industrial TOPCon cells from 25.5% to 26.07% by suppressing J0e,metal,eff without compromising ρc with a dual optimization strategy: (1) engineering the selective emitter sheet resistance (Rsh_SE) to 117 Ω/□ and (2) reducing the LECO‐induced partial metal contact ratio (fpmc) to 1%.
Jiayu Xu +11 more
wiley +1 more source
Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs
TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress.
A. Ciprut, A. Chelly, A. Karsenty
doaj +1 more source
Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study [PDF]
In this work, we observed the signatures of isotropic charge distributions showing the same attributes as the golden ratio (Phi) described in art and architecture, we also present a simulation study of ultra-scaled n-type silicon nanowire transistors ...
Adamu-Lema, Fikru +3 more
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ABSTRACT Aim To critically reflect on a transnational, clinically embedded doctoral journey undertaken during and after the COVID‐19 pandemic, and to draw conceptual and systemic lessons for doctoral education and clinical academic nursing pathways. Background Reflective accounts of doctoral study exist, yet few examine practice‐based PhDs conducted ...
Gideon U. Johnson
wiley +1 more source
This paper investigates a comparative analysis of technology computer-aided design (TCAD) versus machine learning (ML) technique for ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET), which shows the low power ...
Abhay Pratap Singh +2 more
doaj +1 more source
Characterization of Thin p-on-p Radiation Detectors with Active Edges
Active edge p-on-p silicon pixel detectors with thickness of 100 $\mu$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection
Granja, C. +7 more
core +1 more source
Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability [PDF]
In this paper we illustrate how by using advanced atomistic TCAD tools the interplay between long-range process variation and short-range statistical variability in FinFETs can be accurately modelled and simulated for the purposes of Design-Technology Co-
Asenov, A. +4 more
core +1 more source
This work outlines a flexible, modular modelling framework for photovoltaic (PV) systems, consisting of two pre‐processing and six simulation steps. It enables detailed analysis from the cell to the system level. Through multiple case studies, the framework demonstrates its adaptability and effectiveness for a wide range of PV applications and research
Youri Blom +3 more
wiley +1 more source

