Results 81 to 90 of about 11,517 (220)
Carrier Mobility Enhancement in Two‐Dimensional Semiconductor
Interdisciplinary Materials, Volume 5, Issue 5, Page 796-833, September 2026.In this review, we comprehensively describe recent progress in carrier mobility enhancement strategies for 2D semiconductor‐based field‐effect transistors considering the role of intrinsic defects, electrode contact interfaces, dielectric engineering, and lattice strain engineering.
Huchanghui Zuo +6 more
wiley +1 more source
Uncalibrated TCAD methodology for analysis of ESD protection devices [PDF]
, 2016 In this work, an uncalibrated TCAD methodology for simulation of electrostatic discharge (ESD) devices is presented. The methodology addresses TCAD setup issues including device construction, boundary conditions, and choosing a physical model and ...
Chen, Zaichen
core
Traumatic Dissection of Four Brain-Supplying Arteries without Neurologic Deficit
Global Spine Journal, 2014 Study Design Case report and review of the literature. Objectives Case report of a traumatic dissection of all major brain-supplying arteries resulting from a horseback-riding accident.
Florian Pröscholdt MD +4 more
doaj +1 more source
TCAD Solutions for Submicron Copper Interconnect
, 2020 - The demanding task of assessing a long range interconnect reliability can only be achieved by combination of experimental and TCAD methods. A basis for TCAD tools is a sophisticated physical model which takes into account the microstructural ...
J Cervenka +3 more
core
Accelerating Transistor Simulations With Self-Supervised Graph Attention Networks
IEEE AccessTechnology CAD (TCAD) tools are pivotal for transistor modeling, enabling physics-based simulations with high accuracy essential for developing next-generation technology nodes. However, their high computational cost and low throughput severely constrain
Tarek Mohamed, Hussam Amrouch
doaj +1 more source
, 2021 Vanadium dioxide (VO2) devices undergo an insulator-metal-transition by current or voltage injection. This resistive switch is of interest for the implementation of cutting edge applications in high-speed electronics and neuromorphic computing.
Karg, Siegfried +4 more
core +1 more source
Simulation of silicon carbide JFET with the TCAD tool SILVACO
, 2013 118 σ.Εθνικό Μετσόβιο Πολυτεχνείο--Μεταπτυχιακή Εργασία. Διεπιστημονικό-Διατμηματικό Πρόγραμμα Μεταπτυχιακών Σπουδών (Δ.Π.Μ.Σ.) “Μικροσυστήματα και Νανοδιατάξεις”Σε αυτήν την διπλωματική εργασία εξετάζεται η προσομοίωση με TCAD, η βασική λειτουργία του ...
Stefanakis, Dionysios Z. +1 more
core +1 more source
Tunneling FET Calibration Issues: Sentaurus vs. Silvaco TCAD
, 2020 International audienceAbstract In this paper, a comprehensive comparison of TFET simulations using two TCAD simulators, Sentaurus and Silvaco TCAD, is presented.
Ragai, Hani +4 more
core +1 more source
SEU Cross-Section Estimation Using ECORCE TCAD Tool
This work introduces an innovative approach for estimating the Single-Event Upset (SEU) cross-sections in Static Random-Access Memory (SRAM) devices, addressing challenges related to limited technological information and the complexity of Technology ...
Luigi Dilillo +6 more
core +1 more source
The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs
, 2013 In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold
Haifeng Sun +13 more
core +1 more source