Results 81 to 90 of about 9,307 (224)
SOI pMOS drain leakage understanding based on TCAD and measurements
, 2023 International audienceThis work investigates Silicon-on-Insulator (SOI) pMOS drain leakage current. 2D TCAD simulations with Schenk band-to-band tunneling and Field-Enhanced SRH generation recombination models reproduce experimental leakage for various ...
Lacord, Joris +5 more
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NanomaterialsThis paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system.
Seonggyeom Kim, Jonghwan Lee
doaj +1 more source
Results in Physics, 2018 This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He +7 more
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Effect of miR-188 inhibitor on the reporter activity of psiCHECK2-TCAD and psiCHECK2-TCAI reporters.
, 2015 (A, B) Effect of miR-188 inhibitor on reporter activity of psiCHECK2-TCAD and TCAI in SFFs. MiR-188 inhibitor increased the luciferase activity of psiCHECK2-TCAD (A), not psiCHECK2-TCAI (B) in SFFs, compared to the negative control.
Shupei Qiao (791459) +6 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2018 Power consumption and Ion/Ioff ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations.
Carlos Couso +3 more
doaj +1 more source
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
IEEE Journal of the Electron Devices Society, 2018 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro +7 more
doaj +1 more source
TCAD Solutions for Submicron Copper Interconnect
, 2020 - The demanding task of assessing a long range interconnect reliability can only be achieved by combination of experimental and TCAD methods. A basis for TCAD tools is a sophisticated physical model which takes into account the microstructural ...
J Cervenka +3 more
core
Fabrication and Simulating Solar Cell Devices using Silvaco TCAD Tools
, 2013 Solar cells are p-i-n photodiodes, which are operated under forward bias. The intention is to convert the incoming optical power into electrical power with maximum efficiency. In this paper we are going to design a solar cell and simulation of solar cell
Srivastava, Anand Kumar +1 more
core
The temperature dependent TCAD and SPICE modeling of AlGaN/GaN HEMTs
, 2013 In this work, the temperature dependent TCAD and SPICE modeling platform of AlGaN/GaN HEMTs has been established by using Sentaurus TCAD and Silvaco UTMOST IV. Typically, the temperature co-efficient of series resistance, trans-conductance, sub-threshold
Haifeng Sun +13 more
core +1 more source