Results 91 to 100 of about 24,792 (217)
Powernet: SOI Lateral Power Device Breakdown Prediction With Deep Neural Networks
IEEE Access, 2020 The breakdown performance is a critical metric for power device design. This paper explores the feasibility of efficiently predicting the breakdown performance of silicon on insulator (SOI) lateral power device using multi-layer neural networks as an ...
Jing Chen +6 more
doaj +1 more source
Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
, 2004 Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors.
Bortoletto, Daniela +15 more
core +2 more sources
Ultraviolet Photodetectors Based on 4H‐SiC With Honeycomb‐Like Light‐Trapping Structures
Advanced Science, Volume 13, Issue 22, 17 April 2026.A facile photoelectrochemical etching method creates honeycomb‐like light‐trapping microstructures on SiC. These microstructures suppress UV reflection and enhance absorption by extending the optical path and facilitating multiple internal reflections, while strengthening the local electric field.
Huifan Xiong +7 more
wiley +1 more source
Results in Physics, 2018 This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He +7 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2018 Power consumption and Ion/Ioff ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations.
Carlos Couso +3 more
doaj +1 more source
Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC
, 2016 We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a
Betta, Gian-Franco Dalla +5 more
core +1 more source
NanomaterialsThis paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system.
Seonggyeom Kim, Jonghwan Lee
doaj +1 more source
InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
IEEE Journal of the Electron Devices Society, 2018 2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells. In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells. The cell
Carlos Navarro +7 more
doaj +1 more source
BioScript: programming safe chemistry on laboratories-on-a-chip [PDF]
, 2018 This paper introduces BioScript, a domain-specific language (DSL) for programmable biochemistry which executes on emerging microfluidic platforms. The goal of this research is to provide a simple, intuitive, and type-safe DSL that is accessible to life ...
Brisk, Philip +4 more
core
Development and simulations of Enhanced Lateral Drift Sensors
, 2019 We present the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor. In ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing mechanism, which is
Jansen, Hendrik, Velyka, Anastasiia
core +2 more sources