Results 91 to 100 of about 9,307 (224)

A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings

IEEE Open Journal of Power Electronics
For high-power silicon carbide (SiC) devices, breakdown voltage analysis is an important parameter, especially for guard ring design. This work explores the implementation of machine learning on SiC guard ring parameters such as ion implanted dose and ...
Tejender Singh Rawat, Chia-Lung Hung, Yi-Kai Hsiao, Wei-Chen Yu, Surya Elangovan, Wei-Ting Lin, Yi-Rong Lin, Kai-Lin Yang, Nien-Yi Jan, Yung-Hui Li, Hao-Chung Kuo   +10 more
doaj   +1 more source

SEU Cross-Section Estimation Using ECORCE TCAD Tool

This work introduces an innovative approach for estimating the Single-Event Upset (SEU) cross-sections in Static Random-Access Memory (SRAM) devices, addressing challenges related to limited technological information and the complexity of Technology ...
Luigi Dilillo, Alain Michez, Frédéric Saigné, Rubén García Alía, Frédéric Wrobel, Cleiton M. Marques, Ygor Q. Aguiar   +6 more
core   +1 more source

Simulation of silicon carbide JFET with the TCAD tool SILVACO

, 2013
118 σ.Εθνικό Μετσόβιο Πολυτεχνείο--Μεταπτυχιακή Εργασία. Διεπιστημονικό-Διατμηματικό Πρόγραμμα Μεταπτυχιακών Σπουδών (Δ.Π.Μ.Σ.) “Μικροσυστήματα και Νανοδιατάξεις”Σε αυτήν την διπλωματική εργασία εξετάζεται η προσομοίωση με TCAD, η βασική λειτουργία του ...
Stefanakis, Dionysios Z., Στεφανάκης, Διονύσιος Ζ.   +1 more
core   +1 more source

TCAD accurate modeling of trap-induced effects in GaN HEMTs [PDF]

In this work we demonstrate an accurate Technology Computer Aided Design (TCAD) modeling approach for the analysis of trap effects on the electrical features of AlGaN/GaN HEMT devices for microwave applications.
Bonani, Fabrizio, Guerrieri, Simona Donati, Catoggio, Eva   +2 more
core   +1 more source

TCAD Electrothermal Simulations of Self-Oscillations in Vanadium Dioxide Devices for Oscillatory Neural Networks

, 2021
Vanadium dioxide (VO2) devices undergo an insulator-metal-transition by current or voltage injection. This resistive switch is of interest for the implementation of cutting edge applications in high-speed electronics and neuromorphic computing.
Karg, Siegfried, Carapezzi, Stefania, Todri-Sanial, Aida, Nejim, Ahmed, Corti, Elisabetta   +4 more
core  

Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels

IEEE Open Journal of Power Electronics
This article evaluates the dynamic performance of high voltage Silicon and 4H-SiC NPN BJTs based on experimental measurements together with modeling through Silvaco TCAD to describe the charge transient dynamics.
Mana Hosseinzadehlish, Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Xibo Yuan   +4 more
doaj   +1 more source

3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

, 2012
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.
Fu, Yue, Yue Fu, Li, Simon, Simon Li
core   +1 more source

Designs and electric properties studied of 3D trench electrode Si detector with adjustable central collection electrode

AIP Advances, 2018
In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao, Manwen Liu, Ya Zhang, Jun Zhao, Zheng Li   +4 more
doaj   +1 more source

Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis [PDF]

, 2012
Bonani, Fabrizio, F. Bertazzi, F. Bonani, Ghione, Giovanni, Donati Guerrieri, Simona, Bertazzi, Francesco, S. Donati Guerrieri, G. Ghione   +7 more
core   +1 more source

Modeling and simulation of bulk gallium nitride power semiconductor devices

AIP Advances, 2016
Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices.
G. Sabui, P. J. Parbrook, M. Arredondo-Arechavala, Z. J. Shen   +3 more
doaj   +1 more source