Results 91 to 100 of about 11,517 (220)
This paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system.
Seonggyeom Kim, Jonghwan Lee
doaj +1 more source
This paper investigates, using Synopsys Sentaurus TCAD simulation, the dependence of the breakdown voltage of n-on-p backside-illumination Silicon Photomultipliers (BSI-SiPM) on the implantation dose, the implantation energy and the screening SiO2 ...
Ran He +7 more
doaj +1 more source
Modeling and simulation of terahertz detector with tcad software. [PDF]
Modeling and Simulation of Terahertz Detector with TCAD ...
Kojelis, Martynas,
core
Effect of miR-188 inhibitor on the reporter activity of psiCHECK2-TCAD and psiCHECK2-TCAI reporters.
(A, B) Effect of miR-188 inhibitor on reporter activity of psiCHECK2-TCAD and TCAI in SFFs. MiR-188 inhibitor increased the luciferase activity of psiCHECK2-TCAD (A), not psiCHECK2-TCAI (B) in SFFs, compared to the negative control.
Shupei Qiao (791459) +6 more
core +1 more source
Optimization of Single Photon Avalanche Diode Design Using Surrogate-Reinforcement Learning
This paper presents the optimization of Single-Photon Avalanche Diode (SPAD) device design parameters using surrogate-assisted reinforcement learning (RL) framework.
Kazi Mohammad Mamun +2 more
doaj +1 more source
Power consumption and Ion/Ioff ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations.
Carlos Couso +3 more
doaj +1 more source
Physics-based SS and SSLS variability assessment of microwave devices through efficient sensitivity analysis [PDF]
Bonani, Fabrizio +7 more
core +1 more source
The Modeling of a Single-Electron Bipolar Avalanche Transistor in 150 nm CMOS
This paper addresses the complex behavior of Single-Electron Bipolar Avalanche Transistors (SEBATs) through a comprehensive modeling approach. TCAD simulations were used to analyze the behavior of the device during avalanche pulses triggered by electron ...
Abderrezak Boughedda +6 more
doaj +1 more source
A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings
For high-power silicon carbide (SiC) devices, breakdown voltage analysis is an important parameter, especially for guard ring design. This work explores the implementation of machine learning on SiC guard ring parameters such as ion implanted dose and ...
Tejender Singh Rawat +10 more
doaj +1 more source
TCAD accurate modeling of trap-induced effects in GaN HEMTs [PDF]
In this work we demonstrate an accurate Technology Computer Aided Design (TCAD) modeling approach for the analysis of trap effects on the electrical features of AlGaN/GaN HEMT devices for microwave applications.
Bonani, Fabrizio +2 more
core +1 more source

