Results 101 to 110 of about 24,792 (217)

Processing and characterization of epitaxial GaAs radiation detectors

, 2015
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130 $\mu\textrm{m ...
Arsenovich, T., Gädda, A., Härkönen, J., Junkes, A., Karadzhinova, A., Kostamo, P., Lipsanen, H., Luukka, P., Mattila, M., Nenonen, S., Peltola, T., Riekkinen, T., Tuominen, E., Winkler, A., Wu, X.   +14 more
core   +1 more source

A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings

IEEE Open Journal of Power Electronics
For high-power silicon carbide (SiC) devices, breakdown voltage analysis is an important parameter, especially for guard ring design. This work explores the implementation of machine learning on SiC guard ring parameters such as ion implanted dose and ...
Tejender Singh Rawat, Chia-Lung Hung, Yi-Kai Hsiao, Wei-Chen Yu, Surya Elangovan, Wei-Ting Lin, Yi-Rong Lin, Kai-Lin Yang, Nien-Yi Jan, Yung-Hui Li, Hao-Chung Kuo   +10 more
doaj   +1 more source

Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels

IEEE Open Journal of Power Electronics
This article evaluates the dynamic performance of high voltage Silicon and 4H-SiC NPN BJTs based on experimental measurements together with modeling through Silvaco TCAD to describe the charge transient dynamics.
Mana Hosseinzadehlish, Saeed Jahdi, Konstantinos Floros, Ingo Ludtke, Xibo Yuan   +4 more
doaj   +1 more source

Designs and electric properties studied of 3D trench electrode Si detector with adjustable central collection electrode

AIP Advances, 2018
In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao, Manwen Liu, Ya Zhang, Jun Zhao, Zheng Li   +4 more
doaj   +1 more source

Modeling and simulation of bulk gallium nitride power semiconductor devices

AIP Advances, 2016
Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices.
G. Sabui, P. J. Parbrook, M. Arredondo-Arechavala, Z. J. Shen   +3 more
doaj   +1 more source

The Impact of Hearing Aids on Listening Effort and Listening-Related Fatigue - Investigations in a Virtual Realistic Listening Environment

Trends in Hearing
Participation in complex listening situations such as group conversations in noisy environments sets high demands on the auditory system and on cognitive processing.
M. Blümer, J. Heeren, B. Mirkovic, M. Latzel, C. Gordon, D. Crowhen, M. Meis, K. Wagener, M. Schulte   +8 more
doaj   +1 more source

Research of self-formation nanostructures / Nanodarinių formavimosi procesų tyrimas

Mokslas: Lietuvos Ateitis, 2011
Lateral etching processes for the modeling of the geometry of self-formation nanostructures with Silvaco TCAD Athena program are analyzed. Self-formation nanostructures is modeled with different mask selectivity values equal to 2, 10, 40 and 100 with ...
Romas Petrauskas
doaj  

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks

IEEE Journal of the Electron Devices Society
Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions.
Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao   +5 more
doaj   +1 more source

TCAD Simulation of Two Photon Absorption—Transient Current Technique Measurements on Silicon Detectors and LGADs

Sensors
Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes.
Sebastian Pape, Michael Moll, Marcos Fernández García, Moritz Wiehe   +3 more
doaj   +1 more source

Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors

Advanced Electronic Materials
Research on transistors with various architectures is crucial for developing high‐performance, compact devices, as they improve the functionality of integrated circuits within the same or smaller footprint.
Cigdem Cakirlar, Bruno Neckel Wesling, Konstantinos Moustakas, Giulio Galderisi, Sylvain Pelloquin, Oskar Baumgartner, Mischa Thesberg, Thomas Mikolajick, Guilhem Larrieu, Jens Trommer   +9 more
doaj   +1 more source