Results 111 to 120 of about 9,307 (224)

Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks

IEEE Journal of the Electron Devices Society
Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions.
Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao   +5 more
doaj   +1 more source

TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe:C HBT's

, 2010
International audienceThe TCAD infrastructure developed within the DOTFIVE project is described. The hierarchical TCAD platform includes different Boltzmann equation solvers as well as simulators based on the widely used drift-diffusion and hydrodynamic ...
Sasso, G., Al-Sa'Di, Mahmoud, Jungemann, C., Hong, S.M., Pakfar, A., Rinaldi, N., d'Alessandro, V., Marano, I., Tavernier, C., Maneux, Cristell, Fregonese, Sebastien, Schröter, M., Sibaja-Hernandez, A., Wedel, G.   +13 more
core  

TCAD methodology for simulation of GaN-HEMT power devices

, 2014
Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) are candidates for the next generation of power electronic devices and are therefore subject of intense research activities worldwide.
Steve Stoffels, Tommaso Cilento, Benoit Bakeroot, Axel Erlebach, Erlebach, Axel, Denis Marcon, Cilento, Tommaso, Stephan Strauss, Denis, Marcon, Strauss, Stephan, Bakeroot, Benoit, Stoffels, Steve   +11 more
core   +1 more source

Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors

Advanced Electronic Materials
Research on transistors with various architectures is crucial for developing high‐performance, compact devices, as they improve the functionality of integrated circuits within the same or smaller footprint.
Cigdem Cakirlar, Bruno Neckel Wesling, Konstantinos Moustakas, Giulio Galderisi, Sylvain Pelloquin, Oskar Baumgartner, Mischa Thesberg, Thomas Mikolajick, Guilhem Larrieu, Jens Trommer   +9 more
doaj   +1 more source

TCAD modeling of current transport and main reliability issues of polysilicon-channel 3-D NAND Flash strings

, 2020
DOTTORATOLa tecnologia NAND Flash rappresenta oggi una delle soluzioni leader per le memorie non volatili ad alte prestazioni. Il continuo sviluppo dei suoi processi di produzione ha portato la dimensione caratteristica della cella (F) a valori attuali ...
MANNARA, AURELIO
core  

Physics-based Small-Signal sensitivity analysis for the variability aware assessment of devices and linear analog subsystems [PDF]

, 2011
Bonani, Fabrizio, Ghione, Giovanni, Donati Guerrieri, Simona, Bertazzi, Francesco   +3 more
core  

Half-buffer retiming and token cages for synchronous elastic circuits [PDF]

, 2011
Casu, Mario Roberto, M.R. Casu
core   +1 more source

Traumatic Coronary Artery Dissection After a Fall From a Roof. [PDF]

JACC Case Rep
Froeschl I, Barry Q, Totz K, Jung RG, Hancyz S, Hakimjavadi R, Ghanem C, Kolobaric N, Ahmed Z, Di Santo P.   +9 more
europepmc   +1 more source

Teaching technology computer aided design (TCAD) online

, 2011
Since Technology Computer Aided Design (TCAD) is an important component of modern semiconductor manufacturing, a new framework is needed for microelectronics education. An integrated measurement-based microelectronics and VLSI engineering laboratory with
Ananda Maiti (17992615), CK Maiti (19551994)   +1 more
core  

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source