Total Ionizing Dose Effect Simulation Study on 130 nm CMOS Processor. [PDF]
Micromachines (Basel)Liu Y +5 more
europepmc +1 more source
Three-segment lateral δ-doping redistribution in GaAs pHEMTs for gate-drain field relief and improved off-state robustness. [PDF]
Sci RepLiao S, Xu J, Yang J, Xie Q, Jiang Q.
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Calibration of 4H-SiC TCAD models and material parameters
There is a great deal of interest in silicon carbide (SiC) as an electronics material for high-voltage, high-power and hightemperature applications. Device simulation using Technology Computer Aided Design (TCAD) tools has proven to be an especially ...
Philip M, O'Neill A
core
Suppressing Gate-Induced Drain Leakage with an Asymmetric Gate Design in HiPco CNT FETs. [PDF]
Nanomaterials (Basel)Ma H, Gu S, Zhai M, Liu H.
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TCAD Simulation of STI Depth and SiO<sub>2</sub>/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs. [PDF]
Nanomaterials (Basel)Lee W, Lee J.
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T-Cadherin Finetunes Proliferation-Differentiation During Adipogenesis via PI3K-AKT Signaling Pathway. [PDF]
Int J Mol SciKlimovich P +9 more
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Simulations of Novel Semi-Spherical Electrode Detectors Formed by Simultaneously Deep-Etched Trenches. [PDF]
Micromachines (Basel)Wang H, Li Z.
europepmc +1 more source
Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications. [PDF]
Sci RepAshok T, Pandey CK.
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Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling. [PDF]
SmallWang Z +8 more
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3-Tier CFET 6T-SRAM with 2D-TMDs channels for Angstrom technology node. [PDF]
Sci RepLee J +5 more
europepmc +1 more source