Results 131 to 140 of about 11,517 (220)

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Dielectric and temperature-dependent optimization of an asymmetric gate-drain engineered core-shell dopingless nanotube tunnel FET for analog and RF performance. [PDF]

Nanoscale Adv
Kumar T R, Priya G L.
europepmc   +1 more source

Development and Evaluation of a Quadrant Silicon Pad Sensor for the TexAT Active Target Detector. [PDF]

Sensors (Basel)
Gu GM, Chae KY, Hwang JW, Hahn KI, Jeon JA, Kim MB, Ahn S, Lee HY.   +7 more
europepmc   +1 more source

A Universal Deep Learning Model for Predicting Detection Performance and Single-Event Effects of SPAD Devices. [PDF]

Micromachines (Basel)
Chen Y, Huang J, Zeng Y, Jiang Y, Wang S, Chen S, Liu H.   +6 more
europepmc   +1 more source

A Computational Modeling for Reconfigurable Biosensors. [PDF]

Bionanoscience
Grasso R, Gonzalez-Medina JM, Barbruni GL, Carrara S.   +3 more
europepmc   +1 more source

Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs. [PDF]

Discov Nano
Ma W, Peng Y, Wu Q, Zhang S, Sun L, Xiao W, Zhang C, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Numerical Investigation of Short-Channel Effects and RF Performance in Top-Gate In₂O₃ Thin-Film Transistors. [PDF]

Micromachines (Basel)
Xu H, Zhu M, Fang Z, Zhang L.
europepmc   +1 more source

Residual stress modulation as a pathway to reliable multilevel 3D NAND flash storage. [PDF]

Nanoscale Adv
Zhou R, Kim IJ, Park S, Kwon H, Lee JS.
europepmc   +1 more source

Interpreting artificial neural network-based modeling of 4 H-SiC mosfets using explainable AI. [PDF]

Sci Rep
Hsiao YS, Chang PJ, Chen BR, Rai R, Singh SK, Chauhan YS, Lee WJ, Chen NY, Wu TL.   +8 more
europepmc   +1 more source