Results 141 to 150 of about 24,792 (217)

Design and performance analysis of a vertically stacked gate-all-around nanosheet FET with embedded nanocavity for biosensing applications. [PDF]

Sci Rep
Prasanna RL, Karumuri SR, Sreenivasulu VB, Kondaveeti GS.   +3 more
europepmc   +1 more source

Enabling scalable ferroelectric-based future generation vertical NAND flash with bonding-friendly architecture: strategies for erase and disturb optimization. [PDF]

Nanoscale Adv
Song I, Kim J, Lee S, Myeong I.
europepmc   +1 more source

Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems. [PDF]

Adv Sci (Weinh)
Wang W, Zhang T, Yuan Z, Peng H, Lan J, Li Z, Wu Y, Feng X, Lin L, Zhou F, Zhang P, Li Y.   +11 more
europepmc   +1 more source

TCAD Librairies

, 2018
openaire   +1 more source

Ultra-thin (<2 µm) silicon carbide free-standing membranes as beam position monitors for soft and tender X-ray beamlines. [PDF]

J Synchrotron Radiat
Medina E, Trovato G, Calcagno L, Kalbfleisch S, Birri M, Milluzzo G, Romano F, Sangregorio E, Moscato S, Milian FM, Giordanengo S, Vignati A, Camarda M.   +12 more
europepmc   +1 more source

A Novel Spiral Si Drift Detector with a Constant Cathode Gap and Arbitrary Cathode Pitch Profiles. [PDF]

Micromachines (Basel)
Wang H, Li Z.
europepmc   +1 more source

Diffusion mechanism as cause of optical degradation in AlGaN-based UV-C leds investigated by TCAD simulations. [PDF]

Sci Rep
Roccato N, Piva F, Buffolo M, De Santi C, Trivellin N, Susilo N, Vidal DH, Muhin A, Sulmoni L, Wernicke T, Kneissl M, Meneghesso G, Zanoni E, Meneghini M.   +13 more
europepmc   +1 more source

Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C-V Investigation. [PDF]

Micromachines (Basel)
Ackermann V, El Amrani M, Mohamad B, Ben Abbes R, Charles M, Cavalaglio S, Manrique M, Buckley J, Salem B.   +8 more
europepmc   +1 more source

Large-scale gate-all-around MoS₂ transistor array through lossless monolithic 3D integration. [PDF]

Natl Sci Rev
Chen C, Chen K, Zhao H, Lu S, Shang J, Jiang H, Gao L, He X, Jiang S, Chen Z, Zhang Z, Zhang X, Zhang Y.   +12 more
europepmc   +1 more source

Design and Optimization of AlGaN/AlN/GaN L‑SBD for Radiofrequency Applications. [PDF]

ACS Omega
Dudekula S, Jaiswal NK, Ebel T, Chowdam VP, Koo SM, Dhanaraj K.   +5 more
europepmc   +1 more source