3-Tier CFET 6T-SRAM with 2D-TMDs channels for Angstrom technology node. [PDF]
Sci RepLee J +5 more
europepmc +1 more source
Design and temperature assessment of analog/RF and linearity parameters on dual material gate junctionless FinFET at 7 nm technology node for nano scale applications. [PDF]
Sci RepKusuma R.
europepmc +1 more source
Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]
Sci RepLee KH, Yang Y, Heo J, Kim JH.
europepmc +1 more source
Role of mechanical stress on the electrothermal and OFF state current in scaled FinFET devices. [PDF]
Sci RepShubham, Pandey RK.
europepmc +1 more source
Performance Analysis of Dielectric-Modulated C‑Shaped Pocket Dual-Gate Metal-Stacked Oxide-Sandwiched Drain TFET-Based Biosensor. [PDF]
ACS OmegaRani KA, Nanda U.
europepmc +1 more source
Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion Detection. [PDF]
Sensors (Basel)Sangregorio E +5 more
europepmc +1 more source
Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020 This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition and doping profile / electrical characteristic, respectively.
Sanghoon Myung +13 more
openaire +2 more sources
Related searches:
Trends, demands and challenges in TCAD
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2005Currently, TCAD is most heavily used in the device research and process integration phases of a technology life cycle. However, a major trend visible in the industry is the demand to apply TCAD tools far beyond the integration phase into manufacturing and yield optimization.
Ingo Börk
exaly +2 more sources