Results 151 to 160 of about 11,517 (220)

Ultra-sensitive label-free bio-detection via dielectric-modulated GOSC-SOI-TFET. [PDF]

Sci Rep
Kollapudi SNV, Singh MK.
europepmc   +1 more source

TCAD Simulation of STI Depth and SiO₂/Silicon Interface Trap Modulation Effects on Low-Frequency Noise in HZO-Based Nanosheet FETs. [PDF]

Nanomaterials (Basel)
Lee W, Lee J.
europepmc   +1 more source

TCAD Librairies

, 2018
openaire   +1 more source

Three-segment lateral δ-doping redistribution in GaAs pHEMTs for gate-drain field relief and improved off-state robustness. [PDF]

Sci Rep
Liao S, Xu J, Yang J, Xie Q, Jiang Q.
europepmc   +1 more source

Suppressing Gate-Induced Drain Leakage with an Asymmetric Gate Design in HiPco CNT FETs. [PDF]

Nanomaterials (Basel)
Ma H, Gu S, Zhai M, Liu H.
europepmc   +1 more source

T-Cadherin Finetunes Proliferation-Differentiation During Adipogenesis via PI3K-AKT Signaling Pathway. [PDF]

Int J Mol Sci
Klimovich P, Brodsky I, Dzreyan V, Ivleva M, Grigorieva O, Meshcheriakov M, Semina E, Sysoeva V, Tkachuk V, Rubina K.   +9 more
europepmc   +1 more source

Simulations of Novel Semi-Spherical Electrode Detectors Formed by Simultaneously Deep-Etched Trenches. [PDF]

Micromachines (Basel)
Wang H, Li Z.
europepmc   +1 more source

Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications. [PDF]

Sci Rep
Ashok T, Pandey CK.
europepmc   +1 more source

Simulation Study of IGCT with Backside P-N Anode for Low Turn-Off Loss. [PDF]

Micromachines (Basel)
Li L, Ji S, Wei X, Wang Y, Jiao Q, Wang L, Liu R, Tang X, Sun N, Wang N, Huo X, Gao Y, Ma J, Yue R.   +13 more
europepmc   +1 more source

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling. [PDF]

Small
Wang Z, Chen X, Lin F, Li X, Wang F, Guo S, Yu S, Li L, Huang JK.   +8 more
europepmc   +1 more source