Results 171 to 180 of about 9,307 (224)
Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020 This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition and doping profile / electrical characteristic, respectively.
Sanghoon Myung +13 more
openaire +2 more sources
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Trends, demands and challenges in TCAD
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2005Currently, TCAD is most heavily used in the device research and process integration phases of a technology life cycle. However, a major trend visible in the industry is the demand to apply TCAD tools far beyond the integration phase into manufacturing and yield optimization.
VÍCTOR Moroz
exaly +2 more sources
TCAD simulation of microwave circuits: The Doherty amplifier [PDF]
Solid-State Electronics, 2022 Power amplifiers (PAs) for next generation of communication systems are expected to operate at higher frequency and bandwidth to support the growing data rates.
S Donati Guerrieri, Fabrizio Bonani
exaly +2 more sources
Microelectronics Reliability, 2012
Using TCAD tools, many reliability issues can be studied quantitatively. Examples are hot carrier degradation of interfaces, threshold voltage shifts during NBTI stress, radiation effects and soft errors, ESD and latch-up, thermo-mechanical issues, electro-migration and stress-voiding.
Paul Pfäffli +7 more
openaire +1 more source
Using TCAD tools, many reliability issues can be studied quantitatively. Examples are hot carrier degradation of interfaces, threshold voltage shifts during NBTI stress, radiation effects and soft errors, ESD and latch-up, thermo-mechanical issues, electro-migration and stress-voiding.
Paul Pfäffli +7 more
openaire +1 more source
Microelectronics Reliability, 2018
Abstract Technology Computer Aided Design (TCAD) tools can be used to effectively study and analyze a multitude of reliability issues in semiconductor devices. In the following article, we first describe Negative-Bias Temperature Instability (NBTI), which is one of the most severe reliability issues.
Paul Pfäffli +10 more
openaire +1 more source
Abstract Technology Computer Aided Design (TCAD) tools can be used to effectively study and analyze a multitude of reliability issues in semiconductor devices. In the following article, we first describe Negative-Bias Temperature Instability (NBTI), which is one of the most severe reliability issues.
Paul Pfäffli +10 more
openaire +1 more source
Semiconductor wafer representation for TCAD
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1994This work describes the Semiconductor Wafer Representation (SWR) for representing and manipulating wafer state during process and device simulation. The goal of the SWR is to provide an object-oriented interface to a collection of functions designed for developing and integrating Technology CAD (TCAD) applications.
Martin D. Giles +11 more
openaire +1 more source
The Modeling of Electromigration A New Challenge for TCAD?
1998It is argued that the modeling of electromigration at the microscopic level results into systems of equations which can be very well addressed by state-of-the-art TCAD methods.
Schoenmaker, W., Petrescu, V.
openaire +3 more sources
A TCAD calibration methodology
Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2004A systematic methodology for the calibration of laser simulation environment is presented. This allows device designers to obtain good agreement between measurements and simulations in short time. The procedure is based on the laser simulator DESSIS-Laser and the TCAD environment GENESISe, which provides pre-processing, post-processing and numerical ...
V. Laino +3 more
openaire +1 more source
TCAD degradation modeling for LDMOS transistors
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012Physically-based models of hot-carrier stress and dielectric field-enhanced thermal damage have been incorporated in the framework of a TCAD tool with the aim of investigating the electrical stress degradation in integrated power devices over an extended range of stress biases and ambient temperatures.
REGGIANI, SUSANNA +7 more
openaire +1 more source