Results 171 to 180 of about 11,517 (220)

TCAD simulation of microwave circuits: The Doherty amplifier [PDF]

Solid-State Electronics, 2022
Power amplifiers (PAs) for next generation of communication systems are expected to operate at higher frequency and bandwidth to support the growing data rates.
Simona Donati Guerrieri, Fabrizio Bonani   +1 more
exaly   +2 more sources

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TCAD for reliability

Microelectronics Reliability, 2012
Using TCAD tools, many reliability issues can be studied quantitatively. Examples are hot carrier degradation of interfaces, threshold voltage shifts during NBTI stress, radiation effects and soft errors, ESD and latch-up, thermo-mechanical issues, electro-migration and stress-voiding.
Paul Pfäffli, P. Tikhomirov, X. Xu, I. Avci, Y.-S. Oh, P. Balasingam, S. Krishnamoorthy, T. Ma   +7 more
openaire   +1 more source

TCAD modeling for reliability

Microelectronics Reliability, 2018
Abstract Technology Computer Aided Design (TCAD) tools can be used to effectively study and analyze a multitude of reliability issues in semiconductor devices. In the following article, we first describe Negative-Bias Temperature Instability (NBTI), which is one of the most severe reliability issues.
Paul Pfäffli, Hiu Yung Wong, X. Xu, Luca Silvestri, X. W. Lin, T. Yang, Ravi Tiwari, Souvik Mahapatra, Steve Motzny, Victor Moroz, Terry Ma   +10 more
openaire   +2 more sources

Semiconductor wafer representation for TCAD

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1994
This work describes the Semiconductor Wafer Representation (SWR) for representing and manipulating wafer state during process and device simulation. The goal of the SWR is to provide an object-oriented interface to a collection of functions designed for developing and integrating Technology CAD (TCAD) applications.
Martin D. Giles, Duane S. Boning, Goodwin R. Chin, Walter C. Dietrich Jr., Michael S. Karasick, Mark E. Law, Purnendu K. Mozumder, Lee R. Nackman, V. T. Rajan, Duncan M. Hank Walker, Robert H. Wang, Alexander S. Wong   +11 more
openaire   +1 more source

A TCAD calibration methodology

Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2004
A systematic methodology for the calibration of laser simulation environment is presented. This allows device designers to obtain good agreement between measurements and simulations in short time. The procedure is based on the laser simulator DESSIS-Laser and the TCAD environment GENESISe, which provides pre-processing, post-processing and numerical ...
V. Laino, M. Pfeiffer, A. Witzig, W. Fichtner   +3 more
openaire   +1 more source

An Efficient TCAD Model for TeraFET Detectors

2019 IEEE Radio and Wireless Symposium (RWS), 2019
We present a TCAD model for AlGaAs/InGaAs and AlGaN/GaN TeraFET detectors validated in a large dynamic range. The modeling results are in good agreement with the analytical theory of the THz detection using FETs and with the experimental data for the 130 nm AlGaAs/InGaAs HFETs.
Xueqing Liu 0003, Michael S. Shur
openaire   +1 more source

TCAD Validation of the Model

2018
The EPFL substrate lumped device models have been coded in VerilogA and validated by comparison with TCAD simulations. The choice of VerilogA implementation allows to simulate the model in standard circuit simulators as the Cadence Spectre used in this chapter. The Synopsys Sentaurus Device simulator will be used as TCAD software for comparison.
Pietro Buccella, Camillo Stefanucci, Maher Kayal, Jean-Michel Sallese   +3 more
openaire   +1 more source

TCAD degradation modeling for LDMOS transistors

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012
Physically-based models of hot-carrier stress and dielectric field-enhanced thermal damage have been incorporated in the framework of a TCAD tool with the aim of investigating the electrical stress degradation in integrated power devices over an extended range of stress biases and ambient temperatures.
REGGIANI, SUSANNA, BARONE, GAETANO, GNANI, ELENA, GNUDI, ANTONIO, S. Poli, M. Y. Chuang, W. Tian, R. Wise   +7 more
openaire   +1 more source

The Modeling of Electromigration A New Challenge for TCAD?

1998
It is argued that the modeling of electromigration at the microscopic level results into systems of equations which can be very well addressed by state-of-the-art TCAD methods.
Schoenmaker, W., Petrescu, V.
openaire   +3 more sources

TCAD/DA for MPU and ASIC development

Proceedings of 1998 Asia and South Pacific Design Automation Conference, 2002
We have proposed, in this paper a, TCAD/DA methodology for MPU and ASIC with updated processes and devises, which allow a predictive chip-design with quick quantitative correlation studies between process-recipe and CKT and delay parameters required in DA works.
Hiroo Masuda, Katsumi Tsuneno, Hisako Sato, Kazutaka Mori   +3 more
openaire   +2 more sources