Results 191 to 200 of about 11,517 (220)
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2017
Digital device are playing a crucial role in everyone’s life, hence, they are seeking for compact and high-performance devices which can be handled easily. For this researchers made drastic changes to the technology by scaling down the device for lesser area and high performance, but beyond some limit the CMOS device turned in opposite by showing short-
Sreenivasa Rao Ijjada +2 more
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Digital device are playing a crucial role in everyone’s life, hence, they are seeking for compact and high-performance devices which can be handled easily. For this researchers made drastic changes to the technology by scaling down the device for lesser area and high performance, but beyond some limit the CMOS device turned in opposite by showing short-
Sreenivasa Rao Ijjada +2 more
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1995
This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
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This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
openaire +1 more source
A TCAD Framework for Development and Manufacturing
1993The semiconductor manufacturing engineer is often faced with the problems of process integration, equipment control, parametric yield diagnosis, process centering, worst-case design, and device parameter extraction. These problems require the use of technology CAD (TCAD) tools across a spectrum of speed and accuracy.
D. M. H. Walker +3 more
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IEE Colloquium on New Developments in Power Semiconductor Devices, 1996
Physical models of material properties for 4H-SiC TCAD have been presented and used to discuss modelling of a selection of Power Semiconductor Devices. Such TCAD techniques have been utilised to quantify the expected switching speed performance of SiC MESFETs.
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Physical models of material properties for 4H-SiC TCAD have been presented and used to discuss modelling of a selection of Power Semiconductor Devices. Such TCAD techniques have been utilised to quantify the expected switching speed performance of SiC MESFETs.
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Numerical techniques in modern TCAD
2005Modeling and simulation are a crucial aid for reducing development cycle time and costs in modern semiconductor technology. New modeling concepts increasingly require long-term research performed in an interdisciplinary manner, and new numerical methods and algorithms are needed to implement these concepts.The manifold of physical phenomena inherent in
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Perspective on TCAD Integration at Berkeley
1993A perspective on TCAD integration is given along with highlights from work at Berkeley on applications and future systems which contain exploratory aspects of interest in TCAD development. The aspects of interest include process flow simulation, linking to the IC designer, design task interfaces, utilities for mapping data between simulators ...
A. Neureuther, R. Wang, J. Helmsen
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TCAD Analysis of Leakage Current and Breakdown Voltage in Small Pitch 3D Pixel Sensors
Sensors, 2023Gian-Franco Dalla Betta +2 more
exaly
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Marilyn Wolf, Aviral Shrivastava
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Marilyn Wolf, Aviral Shrivastava
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