Results 191 to 200 of about 9,307 (224)
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2007
Today much of the development of semiconductor devices and processes is done by TCAD as it offers unique possibilities in visualisation of processing steps, description of the physical changes and understanding of the interrelation of the process variables. Modelling of processes provides a way to interactively explore the fabrication process, studying
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Today much of the development of semiconductor devices and processes is done by TCAD as it offers unique possibilities in visualisation of processing steps, description of the physical changes and understanding of the interrelation of the process variables. Modelling of processes provides a way to interactively explore the fabrication process, studying
openaire +1 more source
A TCAD Framework for Development and Manufacturing
1993The semiconductor manufacturing engineer is often faced with the problems of process integration, equipment control, parametric yield diagnosis, process centering, worst-case design, and device parameter extraction. These problems require the use of technology CAD (TCAD) tools across a spectrum of speed and accuracy.
D. M. H. Walker +3 more
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1995
This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
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This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
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IEE Colloquium on New Developments in Power Semiconductor Devices, 1996
Physical models of material properties for 4H-SiC TCAD have been presented and used to discuss modelling of a selection of Power Semiconductor Devices. Such TCAD techniques have been utilised to quantify the expected switching speed performance of SiC MESFETs.
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Physical models of material properties for 4H-SiC TCAD have been presented and used to discuss modelling of a selection of Power Semiconductor Devices. Such TCAD techniques have been utilised to quantify the expected switching speed performance of SiC MESFETs.
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Perspective on TCAD Integration at Berkeley
1993A perspective on TCAD integration is given along with highlights from work at Berkeley on applications and future systems which contain exploratory aspects of interest in TCAD development. The aspects of interest include process flow simulation, linking to the IC designer, design task interfaces, utilities for mapping data between simulators ...
A. Neureuther, R. Wang, J. Helmsen
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2014
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TCAD Challenges in the Nanotechnology Era
2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005TCAD process and device modeling has become an essential component of advanced technology development, delivering physical insight into processes and device operation and enabling development and optimization of technology flows. This paper highlights emerging challenges in extending these capabilities into the nanotechnology era, and the opportunities
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A total TCAD environment for DFM
IEE Colloquium on `Improving the Efficiency of IC Manufacturing Technology', 1995This paper presents an integrated software environment that is used as part of a Design For Manufacturability (DFM) procedure. The software allows users to integrate simulation software with statistical analysis, incorporating Design Of Experiments (DOE) and contour plots.
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2017
Digital device are playing a crucial role in everyone’s life, hence, they are seeking for compact and high-performance devices which can be handled easily. For this researchers made drastic changes to the technology by scaling down the device for lesser area and high performance, but beyond some limit the CMOS device turned in opposite by showing short-
Sreenivasa Rao Ijjada +2 more
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Digital device are playing a crucial role in everyone’s life, hence, they are seeking for compact and high-performance devices which can be handled easily. For this researchers made drastic changes to the technology by scaling down the device for lesser area and high performance, but beyond some limit the CMOS device turned in opposite by showing short-
Sreenivasa Rao Ijjada +2 more
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Numerical modeling of FS-trench IGBTs by TCAD and its parameter extraction method
Microelectronics Reliability, 2023Xin Tang, Yifei Luo, Fei Xiao
exaly