Results 181 to 190 of about 24,792 (217)
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1995
This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
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This paper gives an overview about our research on three-dimensional process simulation. Today’s activities are worldwide still suffering from a lack of appropriate geometric modeling, robust gridding, accurate and verifiable physical models as well as computationally efficient numerical algorithms.
E. Leitner +4 more
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Trends, demands and challenges in TCAD
Materials Science and Engineering: B, 2005Currently, TCAD is most heavily used in the device research and process integration phases of a technology life cycle. However, a major trend visible in the industry is the demand to apply TCAD tools far beyond the integration phase into manufacturing and yield optimization.
Ingo Bork +3 more
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2007
Today much of the development of semiconductor devices and processes is done by TCAD as it offers unique possibilities in visualisation of processing steps, description of the physical changes and understanding of the interrelation of the process variables. Modelling of processes provides a way to interactively explore the fabrication process, studying
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Today much of the development of semiconductor devices and processes is done by TCAD as it offers unique possibilities in visualisation of processing steps, description of the physical changes and understanding of the interrelation of the process variables. Modelling of processes provides a way to interactively explore the fabrication process, studying
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Hierarchical TCAD device simulation of FinFETs
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance - for the first time all in one tool.
M. Karner +4 more
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1998
The Semiconductor Research Corporation (SRC) is a consortium that manages IC manufacturing related research. The membership consists of IC manufacturing companies, their suppliers, and a number of affliated companies. Most of the research is conducted at US universities.
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The Semiconductor Research Corporation (SRC) is a consortium that manages IC manufacturing related research. The membership consists of IC manufacturing companies, their suppliers, and a number of affliated companies. Most of the research is conducted at US universities.
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Accuracy counts in modeling TCAD's future
IEEE Potentials, 2000We are on the path to meet the major challenges ahead for TCAD. The emerging computational grid will ultimately solve the challenge of limited computational power. The Modular TCAD Framework will solve the TCAD software challenge once more developers agree to cooperate.
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Advanced Theory of TCAD Process Simulation
2011A key simulation task in TCAD process simulation is to solve the diffusion equations over the simulation mesh to predict the impurity doping profile after thermal processing. In 3D TCAD, the simulation grid size is large and diffusion is often the most time-consuming simulation procedure.
Simon Li, Yue Fu
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2014
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Advanced Theory of TCAD Device Simulation
2011This chapter reviews the basic theories of device simulation within the framework of TCAD. Figure 3.1 shows a practical design of a device simulator of 3D TCAD capability with various modules. One may regard the drift-diffusion (DD) equation module as central building block of a 3D TCAD device simulator.
Simon Li, Yue Fu
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Numerical techniques in modern TCAD
2005Modeling and simulation are a crucial aid for reducing development cycle time and costs in modern semiconductor technology. New modeling concepts increasingly require long-term research performed in an interdisciplinary manner, and new numerical methods and algorithms are needed to implement these concepts.The manifold of physical phenomena inherent in
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