Results 201 to 210 of about 9,307 (224)

Numerical techniques in modern TCAD

2005
Modeling and simulation are a crucial aid for reducing development cycle time and costs in modern semiconductor technology. New modeling concepts increasingly require long-term research performed in an interdisciplinary manner, and new numerical methods and algorithms are needed to implement these concepts.The manifold of physical phenomena inherent in
openaire   +1 more source

TCAD Editorial

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Marilyn Wolf, Aviral Shrivastava
openaire   +1 more source

A unified model for TCAD simulation of the charge generated in semiconductors by low-energy alpha particles and protons

Microelectronics Reliability, 2022
M Ciappa
exaly  

TCAD development for lithography resolution enhancement

IBM Journal of Research and Development, 2001
Lars Liebmann, Scott M. Mansfield, Alfred K. Wong, Mark A. Lavin, William C. Leipold, Timothy G. Dunham   +5 more
openaire   +1 more source

A machine learning approach to TCAD model calibration for MOSFET

Nuclear Science and Techniques/Hewuli, 2023
Bai-Chuan Wang, Chuan-Xiang Tang, Lili Ding   +2 more
exaly  

TCAD-Based Optimization of Field Plate Length & Passivation Layer of AlGaN/GaN HEMT for Higher Cut-Off Frequency & Breakdown Voltage

IETE Technical Review (Institution of Electronics and Telecommunication Engineers, India), 2022
Vandana Kumari, Mridula Gupta, Manoj Saxena   +2 more
exaly  

Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors

Solid-State Electronics, 2014
Federico Pittino, Pierpaolo Palestri, David Esseni   +2 more
exaly  

Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation

Diamond and Related Materials, 2017
Hiu Yung Wong
exaly  

TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

Microelectronic Engineering, 2012
Surya Shankar Dan, Cyrille Le Royer, Wladek Grabinski   +2 more
exaly  

A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces

IEEE Transactions on Electron Devices, 2015
Andrea Bandiziol, Pierpaolo Palestri, Federico Pittino   +2 more
exaly