Results 201 to 210 of about 24,792 (217)

A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces

IEEE Transactions on Electron Devices, 2015
Andrea Bandiziol, Pierpaolo Palestri, Federico Pittino   +2 more
exaly  

Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors

Solid-State Electronics, 2014
Federico Pittino, Pierpaolo Palestri, David Esseni   +2 more
exaly  

Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation

Diamond and Related Materials, 2017
Hiu Yung Wong
exaly  

Design and TCAD simulation of double-sided pixelated low gain avalanche detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2015
G-F Dalla Betta, Lucio Pancheri, Maurizio Boscardin   +2 more
exaly  

Development of a silicon bulk radiation damage model for Sentaurus TCAD

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2017
Angelo Di Canto, Julian Garcia Pardinas, Heinrich Schindler   +2 more
exaly  

TCAD simulation of emerging nanoscale devices

2023
Joy Chowdhury, Jitendra Kumar Das, Angsuman Sarkar, Kamalakanta Mohapatra   +3 more
openaire   +1 more source

Physically based models of electromigration: From Black’s equation to modern TCAD models

Microelectronics Reliability, 2010
Roberto Lacerda de Orio, Hajdin Ceric, Siegfried Selberherr   +2 more
exaly  

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

Microelectronics Reliability, 2017
Kalparupa Mukherjee
exaly  

Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

IEEE Transactions on Electron Devices, 2015
Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi   +2 more
exaly  

Analysis of Improved Performance Under Negative Bias Illumination Stress of Dual Gate Driving a- IGZO TFT by TCAD Simulation

IEEE Electron Device Letters, 2016
Mohammad Masum Billah, MD DELWAR HOSSAIN CHOWDHURY, Mallory Mativenga   +2 more
exaly