Results 71 to 80 of about 24,792 (217)
, 2017 The foreseen upgrade of the LHC to its high luminosity phase (HL-LHC), will maximize the physics potential of the facility. The upgrade is expected to increase the instantaneous luminosity by a factor of 5 and deliver an integrated luminosity of 3000 fb ...
Peltola, Timo
core +1 more source
EcoMat, Volume 8, Issue 5, May 2026.This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail +9 more
wiley +1 more source
Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs
, 2015 We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih +9 more
core +1 more source
Electron Multiplying Low-Voltage CCD With Increased Gain [PDF]
, 2018 Novel designs for the gain elements in electron multiplying (EM) CCDs have been implemented in a device manufactured in a low voltage CMOS process.
Dunford, Alice +2 more
core +1 more source
Next generation of TCAD environments for MEMS design [PDF]
2008 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, 2008 Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838)
Triltsch, Udo, Büttgenbach, Stephanus
openaire +3 more sources
Progress Toward Efficient Wide‐Gap Cu(In,Ga)(S,Se)2 Thin‐Film Solar Cells
Progress in Photovoltaics: Research and Applications, Volume 34, Issue 5, Page 567-588, May 2026.Wide‐gap Cu (In,Ga)(S,Se)2 thin‐film solar cells are studied in view of their performance, limitations, and opportunities for further optimization. Different sources of open circuit voltage limitations were discussed and weighted. Interface recombination appears the main recombination channel, which however can be influenced heavy alkali treatment ...
Setareh Zahedi‐Azad +25 more
wiley +1 more source
Efficiency and timing performance of the MuPix7 high-voltage monolithic active pixel sensor
, 2018 The MuPix7 is a prototype high voltage monolithic active pixel sensor with 103 times 80 um2 pixels thinned to 64 um and incorporating the complete read-out circuitry including a 1.25 Gbit/s differential data link.
Aeschbacher, Frank Meier +19 more
core +1 more source
Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs [PDF]
, 2017 The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation.
Asenov, Asen +11 more
core +1 more source
Electrical TCAD Simulation of STT-MRAMs
2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane +8 more
openaire +2 more sources
On the Electron Transport in Simplified IBC‐SHJ Solar Cells With MoOx Blanket Layer
Progress in Photovoltaics: Research and Applications, Volume 34, Issue 5, Page 523-532, May 2026.In this work, we present a study of electron transport through a novel (n)nc‐Si:H/MoOx stack to improve the understanding and performance of simplified IBC‐SHJ solar cells with MoOx blanket layer. The champion solar cell fabricated with the optimized contact stack and metalized with copper electroplating enables efficiencies beyond 23.5%.
Katarina Kovačević +6 more
wiley +1 more source