Results 71 to 80 of about 11,517 (220)

Application of Noise to Avoid Overfitting in TCAD Augmented Machine Learning

, 2020
In this paper, we propose and study the use of noise to avoid the overfitting issue in Technology Computer-Aided Design-augmented machine learning (TCAD-ML).
Zhang, Yuhao, Wang, Boyan, Yuhao Zhang, Mehta, Kashyap, Hiu-Yung Wong, Sophia Susan Raju, Ming Xiao, Raju, Sophia Susan, Kashyap Mehta, Xiao, Ming, Wong, Hiu Yung, Boyan Wang   +11 more
core   +1 more source

Usage and Limitation of Standard Mobility Models for TCAD Simulation of Nanoscaled FD-SOI MOSFETs

Active and Passive Electronic Components, 2015
TCAD tools have been largely improved in the last decades in order to support both process and device complementary simulations which are usually based on continuously developed models following the technology progress.
A. Ciprut, A. Chelly, A. Karsenty
doaj   +1 more source

Device Simulation of Hole Transport in 233 nm Multiquantum Well AlGaN‐Based UV LED

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Deep‐UV LEDs suffer from low hole injection efficiency. In this work, electro optical simulations of AlGaN DUV LEDs with 6, 12, and 21 quantum wells, emitting at 233 nm, reveal efficient inter‐well hole transport within the active multiple quantum well region. The data are consistent with experimental findings.
Ibrahim Marouf, Friedhard Römer, Marcel Schilling, Franz Biebler, Jakob Höpfner, Massimo Grigoletto, Tim Wernicke, Michael Kneissl, Bernd Witzigmann   +8 more
wiley   +1 more source

Integration of Machine Learning with Statistical Variation Analysis for Ferroelectric Transistor (FE-MOSFETs)

Materials Open
This paper investigates a comparative analysis of technology computer-aided design (TCAD) versus machine learning (ML) technique for ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET), which shows the low power ...
Abhay Pratap Singh, R. K. Baghel, Sukeshni Tirkey   +2 more
doaj   +1 more source

Modeling of Diamond Trench Metal Oxide Semiconductor Barrier Schottky Rectifier Based on Dynamic Reverse Bias Simulation Framework

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Time‐resolved mixed‐mode technology computer aided design simulations reveal that the transient ionization response of deep boron acceptors fundamentally modifies the charge‐sharing mechanism in diamond TMBS rectifiers. Consequently, the optimum trench geometry under dynamic reverse‐bias conditions differs significantly from conventional quasi‐static ...
Martin Kah, Nazareno Donato, Ethan Gardner, Nicolas Rouger, Rebecca Watkins, Calum Henderson, Jingfan Yang, Richard Jackman, Florin Udrea   +8 more
wiley   +1 more source

High‐Mobility and Reliability Ultra‐Thin‐Channel Oxide Semiconductor Field‐Effect Transistors for Chip‐Interconnect‐Embedded Logic and Ferroelectric Memory

Advanced Materials, Volume 38, Issue 52, 16 September 2026.
BEOL‐compatible bilayer heterojunction oxide channel dual‐mode, memory‐logic ferroelectric transistor is fabricated to address long‐standing challenges of mobility and threshold voltage trade‐off by suppressing interfacial defects. This approach not only advances oxide semiconductors toward reliable high‐performance BEOL transistors but also opens new ...
Chun‐Kuei Chen, Sonu Hooda, Maheswari Sivan, Quanzhen Wan, Marco A. Villena, Bastien Beltrando, Zefeng Xu, Zihang Fang, Evgeny Zamburg, Juan B. Roldán, Luca Larcher, Gaurav Thareja, Aaron Voon‐Yew Thean   +12 more
wiley   +1 more source

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
The synaptic behavior of MoS2/graphene floating‐gate structures is shown. A subthreshold slope of 25 mV/decade, a high current ON/OFF ratio of 1010$^{10}$ with sub‐nanowatt power consumption are achieved. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%.
Md. Ibrahim Ahmed, Sharnali Islam
wiley   +1 more source

TWIN: Ternary Weight and Input Neural Network Accelerators Using an Experimentally Informed Ferroelectric Carbon Nanotube FET Compact Model

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Ferroelectric HZO thin films enable negative differential resistance in calibrated FeCNTFET models, creating stable ternary switching states for compact multi‐valued logic. The resulting device‐to‐architecture framework demonstrates efficient ternary neural‐network accelerators with substantial area and power savings, highlighting ferroelectric CNT ...
Mohammad Khaleqi Qaleh Jooq, Abdolah Amirany, Martin F. Sarott, Beatriz Noheda, Johanna van Gent González, Kian Jafari, Elham Heidari, Mostafa Rahimi Azghadi, Hamed Dalir, Saeed Afshar   +9 more
wiley   +1 more source

Computationally Driven Advances in Cu‐CNT On‐Chip Interconnect Materials: From First Principles to Machine Learning

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 5, September 2026.
A multiscale framework integrating electronic, mechanical, and thermal analysis with machine learning to optimize carbon nanotube interconnects. As the component dimensions in integrated circuits shrink to extreme scales, the complexity of interconnect systems is increasing significantly, necessitating an urgent and comprehensive upgrade of ...
Changhong Zhang, Jie Liang, Yi Li, Zhenyu Wang, Haoyuan Li, Zhen Yuan, Jiuren Zhou, Rongmei Chen, Wensheng Zhao, Lei Zhang, Hanshen Xin, Jianhua Zhang   +11 more
wiley   +1 more source

TCAD simulation of thermally evaporated germanium

, 2014
Epitaxial growth of germanium on silicon produces large misfit and threading dislocation densities which dramatically affect electronic properties of Ge. For this reason, TCAD standard models and parameters, optimized for bulk Ge, fail when applied to Ge
COLACE, Lorenzo, Sorianello V., DE IACOVO, ANDREA, ASSANTO, GAETANO   +3 more
core   +1 more source