Results 41 to 50 of about 9,307 (224)

Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT

Известия высших учебных заведений России: Радиоэлектроника
Introduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov, I. S. Pushnitsa, A. L. Dudin, V. V. Perepelovskiy   +3 more
doaj   +1 more source

Charge transport in semiconductors assembled from nanocrystal quantum dots

Nature Communications, 2020
While efficiency of nanocrystal-based devices has improved, charge transport within semiconductors assembled from nanocrystal quantum dots has remained unclear.
Nuri Yazdani, Samuel Andermatt, Maksym Yarema, Vasco Farto, Mohammad Hossein Bani-Hashemian, Sebastian Volk, Weyde M. M. Lin, Olesya Yarema, Mathieu Luisier, Vanessa Wood   +9 more
doaj   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Quantum transport through a constriction in nanosheet gate-all-around transistors

Communications Engineering
In nanoscale transistors, quantum mechanical effects such as tunneling and quantization significantly influence device characteristics. However, large-scale quantum transport simulation remains a challenging field, making it difficult to account for ...
Kyoung Yeon Kim, Hong-Hyun Park, Seonghoon Jin, Uihui Kwon, Woosung Choi, Dae Sin Kim   +5 more
doaj   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

, 2013
A new capability of our well-known NEMO 3-D simulator (Ref. Klimeck et al., 2007 [10]) is introduced by carefully investigating the utility of III–V semiconductor quantum dots as infrared photodetectors at a wavelength of 1.2–1.5 μm.
Ahn, Bu-Young, Ryu, Hoon, Cho, Kumwon, Klimeck, Gerhard, Shin, Mincheol, Nam, Dukyun, Lee, JongSuk Ruth, Lee, Sunhee, Sin, Mincheol   +8 more
core   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Exploiting Temperature Effects for Robust Control and Reference Circuits Using Thin‐Film Contact‐Controlled Transistors

Advanced Electronic Materials, EarlyView.
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink, Jean‐Charles Fustec, Olivier de Sagazan, Rogier Fransen, George Bairaktatis, Emmanuel Jacques, Radu A. Sporea   +6 more
wiley   +1 more source

Intelligent Manufacturing: TCAD-Assisted Adaptive Weighting Neural Networks

IEEE Access, 2018
Using machine intelligence on device and process performance prediction is an emerging methodology in the IC industry. While semiconductor technology computer-aided design (TCAD) has been researched and developed for over 30 years, it should contribute ...
Chien Y. Huang, Sze M. Fu, Parag Parashar, Chun H. Chen, Chandni Akbar, Albert S. Lin   +5 more
doaj   +1 more source

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source