Development of the reactive force field and silicon dry/wet oxidation process modeling
npj Computational Materials, 2023 We developed the Si/O/H reactive force field parameter set and applied to silicon dry/wet oxidation process to understand the underlying physics of the thermal oxidation of the Si(100) surface. Through a systematic development of the Si/O parameter using
Junichi Noaki +3 more
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Effect of Mask Geometry Variation on Plasma Etching Profiles
Micromachines, 2023 It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room at the top”. The
Josip Bobinac +8 more
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Traumatic Carotid Artery Dissection — A Case Report
Brazilian Neurosurgery, 2023 Traumatic carotid artery dissection (TCAD) usually occurs after a direct cervical trauma or blunt trauma that causes hyperextension and excessive rotation of the neck.
Taís Otilia Berres +7 more
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The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy
IEEE Access, 2020 We present numerical methods to enable accurate and robust level-set based simulation of anisotropic wet etching and non-planar epitaxy for semiconductor fabrication.
Alexander Toifl +6 more
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An Experimentally-Validated Verilog-A SPAD Model Extracted from TCAD Simulation [PDF]
, 2018 Single-photon avalanche diodes (SPAD) are photodetectors with exceptional characteristics. This paper proposes a new approach to model them in Verilog-A HDL with the help of a powerful tool: TCAD simulation. Besides, to the best of our knowledge, this is
Carmona Galán, Ricardo +3 more
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Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations [PDF]
, 2017 TCAD simulations have been conducted on a CMOS image sensor in order to characterize the electrical component of the crosstalk between pixels through the study of the electric field distribution. The image sensor consists on a linear array of five pinned
Carmona Galán, Ricardo +2 more
core +1 more source
TCAD 2D numerical simulations for increasing efficiency of AlGaAs – GaAs Solar Cells
Revista de I + D Tecnológico, 2018 The performance of solar cells has improved quickly in recent years, the latest research focuses on thin cells, multijunction cells, solar cells of the group III-V compounds, Tandem cells, etc.
César Palacios A. +3 more
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Modelling and simulation of advanced semiconductor devices [PDF]
, 2017 This paper presents a modelling and simulation study of advanced semiconductor devices. Different Technology Computer Aided Design approaches and models, used in nowadays research are described here.
Adamu-Lema, Fikru +6 more
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Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements [PDF]
, 2010 The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements.
Girard, Sylvain +4 more
core +4 more sources
3D TCAD Analysis Enabling ESD Layout Design Optimization
IEEE Journal of the Electron Devices Society, 2020 On-chip electrostatic discharge (ESD) protection design for integrated circuits (ICs) is a challenging design-for-reliability problem. Since ESD events involve very high current transients in very short time period, current crowding is unavoidable, which
Zijin Pan +4 more
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