Results 11 to 20 of about 11,517 (220)

Electrical TCAD Simulation of STT-MRAMs

2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane, Postel-Pellerin, Jérémy, Yazigy, Nicole, Couzi, Noémie, Marca, Vincenzo, Canet, Pierre, Caçoilo, Nuno, Di Pendina, Grégory, Sousa, Ricardo   +8 more
openaire   +3 more sources

Material Modeling in Semiconductor Process Applications

Journal of Microelectronic Manufacturing, 2020
During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel.
Boris A. Voinov, Patrick H. Keys, Stephen M. Cea, Ananth P. Kaushik, Mark A. Stettler   +4 more
doaj   +1 more source

The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy

IEEE Access, 2020
We present numerical methods to enable accurate and robust level-set based simulation of anisotropic wet etching and non-planar epitaxy for semiconductor fabrication.
Alexander Toifl, Michael Quell, Xaver Klemenschits, Paul Manstetten, Andreas Hossinger, Siegfried Selberherr, Josef Weinbub   +6 more
doaj   +1 more source

Development of the reactive force field and silicon dry/wet oxidation process modeling

npj Computational Materials, 2023
We developed the Si/O/H reactive force field parameter set and applied to silicon dry/wet oxidation process to understand the underlying physics of the thermal oxidation of the Si(100) surface. Through a systematic development of the Si/O parameter using
Junichi Noaki, Satoshi Numazawa, Joohyun Jeon, Shuntaro Kochi   +3 more
doaj   +1 more source

TCAD - A Progressive Tool for Engineers

Radioengineering, 1993
The semiconductor industry is continuously striving to improve the performance of electron devices and circuits. It implies the need for better understanding of their basic behaviour.
I. Adamcik, P. Hazdra, J. Voves, J. Vobecky   +3 more
doaj   +2 more sources

Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors [PDF]

, 2013
A new capability of our well-known NEMO 3-D simulator (Ref. Klimeck et al., 2007 [10]) is introduced by carefully investigating the utility of III–V semiconductor quantum dots as infrared photodetectors at a wavelength of 1.2–1.5 μm.
Ahn, Bu-Young, Ryu, Hoon, Cho, Kumwon, Klimeck, Gerhard, Shin, Mincheol, Nam, Dukyun, Lee, JongSuk Ruth, Lee, Sunhee, Sin, Mincheol   +8 more
core   +2 more sources

Effect of Mask Geometry Variation on Plasma Etching Profiles

Micromachines, 2023
It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room at the top”. The
Josip Bobinac, Tobias Reiter, Julius Piso, Xaver Klemenschits, Oskar Baumgartner, Zlatan Stanojevic, Georg Strof, Markus Karner, Lado Filipovic   +8 more
doaj   +1 more source

Traumatic Carotid Artery Dissection — A Case Report

Brazilian Neurosurgery, 2023
Traumatic carotid artery dissection (TCAD) usually occurs after a direct cervical trauma or blunt trauma that causes hyperextension and excessive rotation of the neck.
Taís Otilia Berres, Wagner Lazaretto Padua, Artur Eduardo Martio, Yasmynni Escher, Luciano Bambini Manzato, José Ricardo Vanzin, Octávio Ruschel Karam, Paulo Moacir Mesquita Filho   +7 more
doaj   +1 more source

TCAD 2D numerical simulations for increasing efficiency of AlGaAs – GaAs Solar Cells

Revista de I + D Tecnológico, 2018
The performance of solar cells has improved quickly in recent years, the latest research focuses on thin cells, multijunction cells, solar cells of the group III-V compounds, Tandem cells, etc.
César Palacios A., Noemi Guerra, Marco Guevara, María José López   +3 more
doaj   +1 more source

Process variation-aware test for resistive bridges [PDF]

, 2009
This paper analyses the behaviour of resistive bridging faults under process variation and shows that process variation has a detrimental impact on test quality in the form of test escapes.
Ingelsson, Urban, Reddy, Sudhakar M., Harrod, Peter, Khursheed, Saqib, Al-Hashimi, Bashir M., Al-Hashimi, Bashir M, Reddy, Sudhakar M   +6 more
core   +1 more source