Results 11 to 20 of about 9,307 (224)

TCAD-Machine Learning Framework for Device Variation and Operating Temperature Analysis With Experimental Demonstration

open access: yesIEEE Journal of the Electron Devices Society, 2020
This work, for the first time, experimentally demonstrates a TCAD-Machine Learning (TCAD-ML) framework to assist the analysis of device-to-device variation and operating (ambient) temperature without the need of physical quantities extraction.
Hiu Yung Wong   +8 more
doaj   +3 more sources

Electrical TCAD Simulation of STT-MRAMs

open access: yes2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is the first time that a simulated I-V hysteresis loop is calibrated on experimental data.
Saifi, Hanane   +8 more
openaire   +3 more sources

COMBINED SIMULATION METHODOLOGY FOR A COMPLETECHARACTERIZATION OF IONIZING RADIATION EFECTS IN DETECTION DEVICES

open access: yesAnales (Asociación Física Argentina), 2023
Ionizing radiation detection devices have been widely used in recent years in various applications and experimental fields, such as high energy physics, nuclear physics, and medical imaging.
N.E. Martín, M. Sofo Haro, M. Valente
doaj   +1 more source

Material Modeling in Semiconductor Process Applications

open access: yesJournal of Microelectronic Manufacturing, 2020
During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel.
Boris A. Voinov   +4 more
doaj   +1 more source

Development of the reactive force field and silicon dry/wet oxidation process modeling

open access: yesnpj Computational Materials, 2023
We developed the Si/O/H reactive force field parameter set and applied to silicon dry/wet oxidation process to understand the underlying physics of the thermal oxidation of the Si(100) surface. Through a systematic development of the Si/O parameter using
Junichi Noaki   +3 more
doaj   +1 more source

Effect of Mask Geometry Variation on Plasma Etching Profiles

open access: yesMicromachines, 2023
It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room at the top”. The
Josip Bobinac   +8 more
doaj   +1 more source

Traumatic Carotid Artery Dissection — A Case Report

open access: yesBrazilian Neurosurgery, 2023
Traumatic carotid artery dissection (TCAD) usually occurs after a direct cervical trauma or blunt trauma that causes hyperextension and excessive rotation of the neck.
Taís Otilia Berres   +7 more
doaj   +1 more source

The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy

open access: yesIEEE Access, 2020
We present numerical methods to enable accurate and robust level-set based simulation of anisotropic wet etching and non-planar epitaxy for semiconductor fabrication.
Alexander Toifl   +6 more
doaj   +1 more source

Process variation-aware test for resistive bridges [PDF]

open access: yes, 2009
This paper analyses the behaviour of resistive bridging faults under process variation and shows that process variation has a detrimental impact on test quality in the form of test escapes.
Ingelsson, Urban   +9 more
core   +1 more source

TCAD 2D numerical simulations for increasing efficiency of AlGaAs – GaAs Solar Cells

open access: yesRevista de I + D Tecnológico, 2018
The performance of solar cells has improved quickly in recent years, the latest research focuses on thin cells, multijunction cells, solar cells of the group III-V compounds, Tandem cells, etc.
César Palacios A.   +3 more
doaj   +1 more source

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