Results 171 to 180 of about 6,771,420 (285)

Successive Orthorhombic Distortions in Kagome Metals by Molecular Orbital Formation

open access: yesAdvanced Materials, EarlyView.
Orthorhombic distortions in kagome metals break the symmetry required for exotic charge order. Synchrotron X‐ray diffraction of NdRu3Si2 reveals successive orthorhombic transitions driven by molecular orbital formation between kagome layers. The frustrated kagome lattice hosts degenerate patterns of kagome dimers whose short‐range correlations produce ...
Ryo Misawa   +15 more
wiley   +1 more source

Colloidal Heterostructures Enable Interfacial Transport of Immiscible Molecules in Printable Organohydrogels

open access: yesAdvanced Materials, EarlyView.
Multiphase printable organohydrogels with tunable microstructures are developed to control molecular transport pathways for immiscible cargo. The tortuosity and domain size of the colloidal phases are tuned by adjusting temperature and shear during processing, which enables the tailoring of diffusion kinetics due to different transport pathways.
Riley E. Dowdy‐Green   +4 more
wiley   +1 more source

3D Anodic Alumina Nanoarchitectures: A Decade of Progress from Foundational Science to Functional Metamaterials

open access: yesAdvanced Materials, EarlyView.
Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley   +1 more source

CTLT Newsletter: The Instructional and Pedagogical Resource Center for Pace Faculty [PDF]

open access: yes, 2011
Center for Teaching, Learning and Technology   +1 more
core   +1 more source

2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices

open access: yesAdvanced Materials, EarlyView.
A new monolayer insulator, InO2, is synthesized by intercalating indium beneath patterned epitaxial graphene on SiC, followed by high‐temperature oxidation. This selective confinement yields large‐area, uniform InO2 with a wide bandgap of 4.1 eV. Upon intercalation, the EG/n‐SiC junction transitions from ohmic to Schottky, exhibiting a rectification ...
Furkan Turker   +18 more
wiley   +1 more source

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