Results 251 to 260 of about 12,195 (298)
Some of the next articles are maybe not open access.
Terahertz semiconductor-heterostructure lasers
Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2002Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz)
KOEHLER R. +8 more
openaire +3 more sources
Bistability in bosonic terahertz lasers
Journal of Physics: Condensed Matter, 2014We study theoretically terahertz (THz) lasing in a system consisting of a quantum well placed inside an optical microcavity and a THz cavity in the regime of two-photon excitation of 2p dark exciton states. The stability of the system with varying parameters of the microcavity under coherent pumping is analyzed.
A A Pervishko +3 more
openaire +2 more sources
Terahertz heterostructure lasers
MWP 2003 Proceedings. International Topical Meeting on Microwave Photonics, 2003., 2005Unipolar semiconductor injection lasers emitting at THz frequencies have been demonstrated. The devices, based on the quantum-cascade scheme in GaAs/AlGaAs superlattices, operate in continuous-wave up to 50 K (70 K pulsed) with output powers of several mW.
A. Tredicucci +6 more
openaire +1 more source
2008 IEEE 21st International Semiconductor Laser Conference, 2008
Stimulated donor and Raman Stokes emission has been achieved under intracenter excitation and photoionization of shallow donor centers in silicon. A pulsed laser emission of up to a few mW of peak power in the 1-7 THz frequency range has been obtained at low temperatures (< 30 K).
Pavlov, Sergey +6 more
openaire +2 more sources
Stimulated donor and Raman Stokes emission has been achieved under intracenter excitation and photoionization of shallow donor centers in silicon. A pulsed laser emission of up to a few mW of peak power in the 1-7 THz frequency range has been obtained at low temperatures (< 30 K).
Pavlov, Sergey +6 more
openaire +2 more sources
Terahertz laser frequency combs
Nature Photonics, 2014Frequency combs based on terahertz quantum cascade lasers, which combine the high power of lasers with the broadband capabilities of pulsed sources, are demonstrated. The frequency combs generate 5 mW of terahertz power covering a frequency range of almost 500 GHz and produce more than 70 lines at 3.5 THz.
David Burghoff +2 more
exaly +2 more sources
Laser Terahertz Emission Microscope
Proceedings of the IEEE, 2007Developments of laser terahertz (THz) emission microscope (LTEM) systems are reviewed. Femtosecond lasers can excite the THz wave emission from various electronic materials, such as semiconductors, high-temperature superconductors, manganites, multiferroic oxides, etc., due to ultrafast current modulation.
Hironaru Murakami +5 more
openaire +1 more source
Terahertz heterostructure lasers
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003Quantum cascade lasers in GaAs/AlGaAs heterostructures are operated in the THz range, with peak powers of several mWs and thresholds of few hundred A/cm/sup 2/ up to 60 K. Single-mode and continuous-wave emission are also achieved at 4.4 THz.
A. Tredicucci +8 more
openaire +1 more source
2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006
CS2 laser with optical pumping has been offered for obtaining powerful T-rays. As a pumping source CO2 laser oscillating on the hot band (wavelength 11.4 mum) has been used. Calculations have shown that at the optimal conditions the output 0.1 J at the peak power 1 MW can be obtained.
V.A. Gorobets +2 more
openaire +1 more source
CS2 laser with optical pumping has been offered for obtaining powerful T-rays. As a pumping source CO2 laser oscillating on the hot band (wavelength 11.4 mum) has been used. Calculations have shown that at the optimal conditions the output 0.1 J at the peak power 1 MW can be obtained.
V.A. Gorobets +2 more
openaire +1 more source
Fabrication of terahertz metamaterials by laser printing
Optics Letters, 2010A laser printing technique was used to fabricate split-ring resonators (SRRs) on Si substrates for terahertz (THz) metamaterials and their resonance behavior evaluated by THz time-domain spectroscopy. The laser-printed Ag SRRs exhibited sharp edge definition and excellent thickness uniformity, which resulted in an electromagnetic response similar to ...
Heungsoo, Kim +5 more
openaire +2 more sources
Optimizing the Operation of Terahertz Silicon Lasers
IEEE Journal of Selected Topics in Quantum Electronics, 2009In this paper, a thorough characterization of terahertz silicon lasers with respect to doping concentration and operation temperature has been carried out. Several factors limiting the laser operation, such as heating of the laser crystal and absorption by photoinduced free carriers, are discussed.
Pavlov, S.G. +6 more
openaire +2 more sources

