Results 91 to 100 of about 86,415 (337)
Complementary Logic Driven by Dielectrophoretic Assembly of 2D Semiconductors
Scalable, parallel fabrication of complementary logic gates is demonstrated using electric‐field‐driven deterministic assembly of electrochemically exfoliated 2D n‐type MoS2 and p‐type WSe2 nanosheets. This strategy yields MoS2 and WSe2 transistors featuring average mobilities of 4.3 and 3.0 cm2 V−1 s−1, respectively, and on/off ratios of > 104 ...
Dongjoon Rhee +10 more
wiley +1 more source
Temperature telemetric transmitter Patent [PDF]
Temperature telemetric transmitter with frequency determining tank circuit for short range ...
Harrison, R. G., Jr.
core +1 more source
Thermoelectric temperature sensors are developed that directly measure heat changes during optical‐based neural stimulation with millisecond precision. The sensors reveal the temperature windows for safe reversible neural modulation: 1.4–4.5 °C enables reversible neural inhibition, while temperatures above 6.1 °C cause permanent thermal damage.
Junhee Lee +9 more
wiley +1 more source
Development of GaAs and GaAs/1-x/P/x/ thin-film bipolar transistors Final report [PDF]
Development of GaAs and GaAs/1-xPx thin film bipolar ...
Dean, R. H., Nuese, C. J.
core +1 more source
Since John Bardeen, William Shockley, and Walter Brattain invented the world's first transistor in 1947, inorganic field-effect transistors (FETs) have dominated the mainstream microelectronics industry. They are the fundamental building blocks for basic analytical circuits, such as amplifiers, as well as the key elements for digital combinational ...
Reese, Colin +3 more
openaire +1 more source
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey +5 more
wiley +1 more source
Thin film field-effect transistor with ZnO:Li ferroelectric channel
An n-type channel transparent thin film field-effect transistor (FET) using a top-gate configuration on a sapphire substrate is presented. ZnO:Li film was used as a channel, and MgF2 film as a gate insulator.
Armen Poghosyan +2 more
doaj +1 more source
Development of GaAs and GaAs sub /1-x/ P sub x thin-film bipolar transistors Final report [PDF]
Fabrication and electrical properties of GaAs type thin film bipolar ...
Dean, R. H. +2 more
core +1 more source
Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high ...
Carrad, D.J., +9 more
core +1 more source
Two‐Dimensional Materials as a Multiproperty Sensing Platform
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana +11 more
wiley +1 more source

