Results 211 to 220 of about 86,415 (337)

Thin Film Transistors

open access: yesIEEJ Transactions on Fundamentals and Materials, 1990
openaire   +2 more sources

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Floating body effect in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT). [PDF]

open access: yesSci Rep
Park J   +13 more
europepmc   +1 more source

Amorphous N-doped InSnZnO thin films deposited by RF sputtering for thin-film transistor application

open access: gold, 2023
Zhi-Yue Li   +6 more
openalex   +2 more sources

Electrically Readable Lateral Flow Assay Using Organic Transistors for Diagnostic Applications

open access: yesAdvanced Materials, EarlyView.
Electrolyte‐gated organic field‐effect transistors (EGOFETs) are integrated with lateral flow (LF) paper fluidics to create a reusable, portable, and low‐cost point‐of‐care (PoC) diagnostic test. The devices are validated for Human Immunoglobulin G detection, achieving high sensitivity (0.1 fm), selectivity, and reproducibility with rapid results in 20–
María Jesús Ortiz‐Aguayo   +4 more
wiley   +1 more source

A high-performance organic thin-film transistor with Parylene/PMMA bilayer insulation based on P3HT. [PDF]

open access: yesiScience
Sang S   +9 more
europepmc   +1 more source

Silver Ions as Ambipolar Dopants in InAs Nanocrystal Solids

open access: yesAdvanced Materials, EarlyView.
Ag⁺ ions post‐introduced into InAs nanocrystal films act as ambipolar dopants whose effect depends on host polarity and dopant concentration. In n‐type InAs nanocrystal films, Ag⁺ occupies interstitial sites to yield n‐type doping effect, whereas in Zn‐doped p‐type InAs nanocrystal films, it first forms p‐type surface doping effect and later induces n ...
Hwichan Cho   +11 more
wiley   +1 more source

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