Results 221 to 230 of about 21,510 (298)

Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu, Tao Han, Jiahui Ding, Hong Lian, Lingling Yao, Zhaoxin Xu, Xingyu Zhang, Shuanglong Wang, Jiangnan Xia, Tianchi Zhang, Weiwei Kang, Qingchen Dong   +11 more
wiley   +1 more source

Thin-film transistor for temporal self-adaptive reservoir computing with closed-loop architecture. [PDF]

Sci Adv
Chen R, Yang H, Li R, Yu G, Zhang Y, Dong J, Han D, Zhou Z, Huang P, Liu L, Liu X, Kang J.   +11 more
europepmc   +1 more source

Oxygen‐Assisted MOCVD Growth of Monolayer PtSe2 Films With Bandgap Opening for Semiconducting FET Channels

Advanced Science, EarlyView.
Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim, Hee‐Soo So, Minseok Yoo, Saeyoung Oh, Dongyoung Kim, Minseung Gyeon, Min‐Kyung Jo, Gichang Noh, Tae Soo Kim, Min‐gyu Kim, Jeongwon Park, Hyun‐Jun Chai, Minsoo Kang, Suhyun Kim, Ayoung Ham, Jaehyun Lee, Jongsun Lim, Seungwoo Song, Joon Young Kwak, Seunghwan Seo, Chang‐Soo Lee, Chang Gyoun Kim, Kibum Kang   +22 more
wiley   +1 more source

Enhancing Pixel Charging Efficiency by Optimizing Thin-Film Transistor Dimensions in Gate Driver Circuits for Active-Matrix Liquid Crystal Displays. [PDF]

Micromachines (Basel)
Ma X, Zou X, Yan R, Yeung FSY, Zhang W, Yuan X.   +5 more
europepmc   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld   +10 more
wiley   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

Advanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami, Koshi Oi, Keisuke Yamada, Jiang Pu, Hao Ou, Takahiko Endo, Yasumitsu Miyata, Taishi Takenobu   +7 more
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source