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Deciphering the Crystallinity‐Dependent Sensitivity of Charge Injection in n‐Channel Organic Transistors: Reliable Characterization and Optimized Performance

open access: yesAdvanced Science, EarlyView.
Precise characterization of n‐type organic semiconductors necessitates decoupling interfacial constraints from intrinsic charge transport. This work reveals that disordered polymers are particularly vulnerable to contact‐limited bottlenecks compared to their crystalline counterparts.
Walid Boukhili   +15 more
wiley   +1 more source

Battery‐Inspired Electrochemical Synapses for Neuromorphic Applications

open access: yesAdvanced Science, EarlyView.
Battery‐ion‐inspired synaptic devices integrate diverse electrolyte systems (solid, ion‐gel, liquid) with transition metal oxides, two‐dimensional materials, and organic channels to regulate ion‐electron coupling. By tailoring ion transport and host interactions, these platforms enable controllable plasticity and energy‐efficient implementations for ...
Won Woo Lee   +6 more
wiley   +1 more source
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Thin-film transistors

Electronics and Power, 1969
In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
openaire   +1 more source

An adaptive thin film transistor

1966 International Electron Devices Meeting, 1966
A thin film transistor (TFT) is described and demonstrated whose transfer characteristic can be reversibly adapted by a short duration voltage pulse applied to a high impedance gate electrode. The device is a four terminal-two gate structure: A source, drain, and insulator gate contact form the basic TFT while the amount of polarity of the polarization
S.S. Perlman, K.H. Ludewig
openaire   +1 more source

Zapping thin film transistors

Microelectronics Reliability, 2002
It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit.
Tošić Golo, N.   +2 more
openaire   +2 more sources

Organic thin-film transistors

Chemical Society Reviews, 2010
Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 ...
openaire   +3 more sources

Fabrication and characterization of ultra-thin ZnO based bottom gate thin film transistor for UV detection

Micro and Nanostructures, 2023
Kunal Singh   +2 more
exaly  

High-κ SrTiO thin film as gate dielectric of a solution processed SnO thin film transistor

Materials Science in Semiconductor Processing, 2023
Bhola Pal, Sajal Biring, Utkarsh Pandey
exaly  

A Water-Gated Organic Thin-Film Transistor for Glyphosate Detection: A Comparative Study with Fluorescence Sensing

Chemistry - A European Journal, 2020
Tsuyoshi Minami   +2 more
exaly  

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