Results 41 to 50 of about 1,315,436 (317)

Preparation and characterization of suitable insulating and transparent conducting thin films for thin film electroluminescent devices by sol-gel process [PDF]

open access: yes, 2001
Thin film electroluminescent (TFEL) displays are attractive because they are light, have low power consumption, wide viewing angle and long lifetime, are extremely rugged and can be used in hostile environments.
Alam, Mohammad Jahangir
core  

Concentration Dependent Structural, Optical and Electrochromic Properties of MoO3 Thin Films

open access: yesInternational Journal of Electrochemical Science, 2008
Thin films of molybdenum trioxide were deposited onto glass and electrically conducting substrates fluorine doped tin oxide coated glass (FTO) by spray pyrolysis technique.
S.S. Mahajan   +4 more
doaj   +1 more source

On the feasibility of all-solid-state batteries with LLZO as a single electrolyte

open access: yesScientific Reports, 2022
Replacement of Li-ion liquid-state electrolytes by solid-state counterparts in a Li-ion battery (LIB) is a major research objective as well as an urgent priority for the industry, as it enables the use of a Li metal anode and provides new opportunities ...
Kostiantyn V. Kravchyk   +2 more
doaj   +1 more source

Carboxylic‐Acid Functionalized Multiwalled Carbon Nanotube‐Alkane‐Based Resistive Temperature Sensor for Cold Chain Applications

open access: yesAdvanced Engineering Materials, EarlyView.
This study presents a reversible temperature sensor with high switching ratio, ∼103. The device is fabricated using PET‐ITO and carbon nanotube dispersions in alkane. Considering its application in cold chain logistics, a proof‐of‐concept with LED is showcased. Thus, a temperature drop below the threshold temperature (crystallization temperature of the
Sunil Kumar Behera   +8 more
wiley   +1 more source

Giant dielectric permittivity in ferroelectric thin films : domain wall ping pong

open access: yes, 2015
This study was supported by the National Key Basic Research Program of China (No. 2014CB921004), the National Natural Science Foundation of China (Nos.
Scott, James Floyd   +7 more
core   +1 more source

Preparation and characterization of the defect–conductivity relationship of Ga-doped ZnO thin films deposited by nonreactive radio-frequency–magnetron sputtering [PDF]

open access: yes, 2010
Ga-doped ZnO (ZnO:Ga) thin films were prepared by radio-frequency–magnetron sputtering on conventional glass substrates at room temperature. The structural, electrical, and optical properties of these films as a function of argon pressure and film ...
Pasquet, Isabelle   +11 more
core   +1 more source

Low‐Cost, Large‐Scale Nanoporous Metals by Mechanical Alloying, Oxide Reduction, and Dealloying of Powders

open access: yesAdvanced Engineering Materials, EarlyView.
Powder metal processing provides scalable advantages in nanoporous (np) metal development. Mechanical alloying is used to produce unique precursors for hybrid nanopore formation by oxide reduction and dealloying. As demonstrated in np Ag, this approach improves process efficiency while promoting smaller ligaments and larger pores, both of which are ...
Mark A. Atwater, Oliver A. Fowler
wiley   +1 more source

Thin film transistors and thin film transistor circuits [PDF]

open access: yesMicroelectronics Reliability, 1983
In this paper the possible circuit applications of thin film transistors, made by shadow masks, are discussed. Special attention is paid to the basic parameters determining the circuit properties.
openaire   +4 more sources

Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

open access: yesNanoscale Research Letters, 2019
A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing.
Zhuo Wang   +5 more
doaj   +1 more source

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

open access: yesNanoscale Research Letters, 2022
A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom ...
Siyu Deng   +8 more
doaj   +1 more source

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