Results 31 to 40 of about 1,211,103 (234)
Advances in Condensed Matter Physics, 2013 Co doped CdTe powder samples were prepared by solid-state reaction method. In the present work effect of Co doping on structural, optical, and magnetic properties has been studied.
M. Rigana Begam +6 more
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Nanoscale Research Letters, 2022 Lithium–sulfur (Li–S) cells have been regarded as attractive alternatives to achieve higher energy densities because of their theoretical specific energy far beyond the lithium-ion cells.
Li Zhang +9 more
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Synthesis and Optical Properties of Sprayed ZnO and ZnO:Ga Thin Films [PDF]
, 2012 Characteristics and optical constants of pure and Ga-doped ZnO thin films have been studied. Pure and Ga-doped zinc oxide thin films were deposited onto glass substrates using the spray pyrolysis technique.
Chiad, S. S. +3 more
core +3 more sources
Crystals, 2019 The special issue is "Thin Film Transistor". There are eight contributed papers. They focus on organic thin film transistors, fluorinated oligothiophenes transistors, surface treated or hydrogen effect on oxide-semiconductor-based thin film transistors, and their corresponding application in flat panel displays and optical detecting.
openaire +3 more sources
Scientific ReportsSemiconductor films are crucial in photocatalysis applications, yet their controlled production remains challenging. Previous studies have mainly focused on deposition processes, heating rates, and doping of semiconductor oxides.
Mohammed Althamthami +5 more
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Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films \ud [PDF]
, 2011 A study on the effects of the residual strain in Pb(Zr0.52Ti0.48)O3 (PZT) thin films on the ferroelectric and piezoelectric properties is presented. Epitaxial (001)-oriented PZT thin film capacitors are sandwiched between SrRuO3 electrodes. The thin film
Dekkers, Jan M. +8 more
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Nanoscale Research Letters, 2017 Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the Al2O3/GaN MOS devices. By featuring only one single peak in the parallel conductance (G p/ω) characteristics in the deep depletion region, one single ...
Yuanyuan Shi +7 more
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High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates
Nanoscale Research Letters, 2022 A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom ...
Siyu Deng +8 more
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Characterization of highly anisotropic three-dimensionally nanostructured surfaces
, 2013 Generalized ellipsometry, a non-destructive optical characterization technique, is employed to determine geometrical structure parameters and anisotropic dielectric properties of highly spatially coherent three-dimensionally nanostructured thin films ...
Schmidt, Daniel
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Characterization of nano-composite M-2411/Y-123 thin films by electron backscatter diffraction and in-field critical current measurements [PDF]
, 2010 Thin films of nano-composite Y-Ba-Cu-O (YBCO) superconductors containing nano-sized, non-superconducting particles of Y2Ba 4CuMOx (M-2411 with M = Ag and Nb) have been prepared by the PLD technique.
A Koblischka-Veneva +8 more
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