Results 261 to 270 of about 223,006 (306)

Threshold voltages of SOI MuGFETs

Solid-State Electronics, 2008
Abstract The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI ...
Maria Glória Caño de Andrade, João Antonio Martino   +1 more
openaire   +1 more source

Threshold Voltage Improvement Scheme for High-voltage IGBT

2019 3rd International Conference on Electronic Information Technology and Computer Engineering (EITCE), 2019
In this paper, the impact of silicon nitride process on threshold voltage (V th ) in an IGBT process is analyzed. And an improvement process that can effectively eliminate the effects of silicon nitride stress is proposed. Silicon nitride has strong shielding ability and high hardness.
Shaohua Dong, Rui Jin, Pengfei Wu, Lei Cui, Xiaoluan Yang, Tongtong Zi, Jinping Zhang   +6 more
openaire   +1 more source

Transistor reliability variation correlation to threshold voltage

2015 IEEE International Reliability Physics Symposium, 2015
MOSFET reliability data are often represented as a function of gate overdrive (V G –V T ) with the implicit assumption that overdrive is the appropriate normalizing parameter. While this can be true for some specific sources of variation, reliability does not necessarily track gate overdrive.
Stephen Ramey, M. Chahal, P. Nayak, Steven R. Novak, Chetan Prasad, Jeffery Hicks   +5 more
openaire   +1 more source

Near-threshold voltage (NTV) design

Proceedings of the 49th Annual Design Automation Conference, 2012
Moore's Law will continue providing abundance of transistors for integration, only to be limited by the energy consumption. Near threshold voltage (NTV) operation has potential to improve energy efficiency by an order of magnitude. We discuss design techniques necessary for reliable operation over a wide range of supply voltage — from nominal down to ...
Himanshu Kaul, Mark A. Anders 0001, Steven Hsu, Amit Agarwal 0001, Ram Krishnamurthy 0001, Shekhar Borkar   +5 more
openaire   +1 more source

Extraction of the threshold voltage of MOSFETs

1998
The threshold voltage VT is an important parameter for MOSFET modeling, simulation and characterization [1, 2], as can be seen clearly from the MOSFET models developed and discussed in Chapter 1. Such a voltage is conventionally defined as the gate voltage that causes the onset of strong inversion in the channel of MOSFETs.
J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez   +2 more
openaire   +1 more source

Voltage pulse generator for electroporation threshold evaluation

IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society, 2016
Electrochemotherapy is a clinical therapy that uses voltage pulses to electropore cell membranes. This paper presents the description of an experimental set-up including the design of a prototype of voltage pulses generator for laboratory experiments in electroporation.
BULLO, MARCO, DUGHIERO, FABRIZIO, FORZAN, MICHELE, Montanari, S., SIENI, ELISABETTA, Tosato, E., CAMPANA, LUCA GIOVANNI, ROSSI, CARLO RICCARDO   +7 more
openaire   +1 more source

Revisiting MOSFET threshold voltage extraction methods

Microelectronics Reliability, 2013
Abstract This article presents an up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs. It includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and ...
Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Alberto Terán Barrios, Juin J. Liou, Ching-Sung Ho   +5 more
openaire   +2 more sources

Multi-Threshold Voltage FinFET Sequential Circuits

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2011
New multi threshold voltage (multi-Vth) brute-force FinFET sequential circuits with independent-gate bias, work-function engineering, and gate-drain/source overlap engineering techniques are presented in this paper. The total active mode power consumption, the clock power, and the average leakage power of the multi-Vth sequential circuits are reduced ...
Sherif A. Tawfik, Volkan Kursun
openaire   +2 more sources

Library Optimization for Near-Threshold Voltage Design

2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018
A circuit operating at near-threshold voltage (NTV) dissipates much less energy, but it suffers from significant increase in cell delay as well as delay variation. In this paper, we address two library optimization methods for NTV design: (1) transistor lengths are increased to benefit from reverse short channel effect (RSCE), and (2) each flip-flop is
Daijoon Hyun, Jaewoo Seo, Youngsoo Shin
openaire   +1 more source

An Empirical Model for the Threshold Voltage of Enhancement NMOSFET's

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
A new empirical model for the threshold voltage of enhancement NMOSFET is proposed based on experimental observations. This model covers both short and narrow channel effects. The model equation is formulated by the superposition of these two effects, and extraction of model parameters is presented.
Hong-June Park, Choong-Ki Kim
openaire   +1 more source