Results 251 to 260 of about 223,886 (306)
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Voltage signal of photoreceptors at visual threshold
Nature, 1977IT has long been known that vertebrate photoreceptors can signal the absorption of single quanta of light1. The extraordinary sensitivity of the visual system is usually ascribed both to the sensitivity of the photoreceptors and to the integration of their signals by higher-order neurones.
G L, Fain, A M, Granda, J M, Maxwell
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Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions [PDF]
IEEE Electron Device Letters, 2020 In this research, we investigate threshold voltage drift in a B-Te based OTS device under various operation conditions. To this aim, drift of threshold voltage after a switching process is examined.
Jaimyun Jung +2 more
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An Approximation Algorithm for Threshold Voltage Optimization
ACM Transactions on Design Automation of Electronic Systems, 2018We present a primal-dual approximation algorithm for minimizing the leakage power of an integrated circuit by assigning gate threshold voltages. While most existing techniques do not provide a performance guarantee, we prove an upper bound on the power consumption. The algorithm is practical and works with an industrial sign-off timer. It can
Siad Daboul +3 more
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Threshold voltage based CMOS voltage reference
IEE Proceedings - Circuits, Devices and Systems, 2004The paper describes a CMOS voltage reference design that uses the temperature dependence of NMOS and PMOS threshold voltages to form a temperature-insensitive reference. No diodes or parasitic bipolar transistors are used. The circuit architecture accommodates a wide range of output voltages. A test chip is fabricated using a 0.5 /spl mu/m CMOS process.
Y. Dai +3 more
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CMOS voltage reference based on threshold voltage and thermal voltage
Analog Integrated Circuits and Signal Processing, 2009A fully CMOS based voltage reference circuit is presented in this paper. The voltage reference circuit uses the difference between gate-to-source voltages of two MOSFETs operating in the weak-inversion region to generate the voltage with positive temperature coefficient. The reference voltage can be obtained by combining this voltage difference and the
Tien-Yu Lo +2 more
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Time-dependency of the threshold voltage in memristive devices
2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2011We describe a generic exponential model with four parameters for thin-film memristive devices. This model is used to analyze the time dependency of the threshold voltage which defines the transition between non-programming and programming phases of the device. A relationship between timescale of operation and threshold voltage is derived.
Eero Lehtonen +3 more
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The dynamic threshold voltage MOSFET
Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474), 2002In this contribution, the development of the dynamic threshold voltage (DT) MOSFET is reviewed. The forward-biasing of the source-substrate junction was proposed for the first time in 1984 as part of an early strategy to improve the MOSFET performance when scaled.
F.J. de la Hidalga-W., M.J. Deen
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On the extraction of the threshold voltage of MOSFETs
1997 21st International Conference on Microelectronics. Proceedings, 1997A new method to extract the threshold voltage and the effective channel of MOSFETs, which is insensitive to the series resistances, is presented. This method, which is weakly dependent on the mobility model, is tested in circuit simulator and measurement environments.
A. Ortiz-Conde +7 more
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The magnetron “threshold voltage” revisited
Physics of Plasmas, 1997In view of the revival of interest in high-power magnetrons, an important magnetron parameter called the threshold voltage has been rederived for both relativistic and nonrelativistic cases using a novel and simplified approach. The main purpose of the paper is to investigate the physical significance of the threshold voltage and to show that, contrary
P. A. Lindsay, M. Esterson, X. Chen
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Threshold voltages of SOI MuGFETs
Solid-State Electronics, 2008Abstract The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI ...
Maria Glória Caño de Andrade +1 more
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