Results 131 to 140 of about 1,875 (175)

Silicon anisotropic etching of TMAH solution

ISIE 2001. 2001 IEEE International Symposium on Industrial Electronics Proceedings (Cat. No.01TH8570), 2002
Detailed characteristics of tetramathyl ammonium hydroxide (TMAH, (CH/sub 3/)/sub 4/ NOH) as a silicon anisotropic etching solution with various concentrations from 5 to 40 wt% and temperatures between 60 to 90/spl deg/C have been studied. The etching of (100) crystal decreases with increasing concentration and decreasing temperature.
W. Sonphao, S. Chaisirikul
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Silicon etching characteristics for the TMAH based solution with additives

10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2015
In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10~25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C.
Ki-Wha Jun, Jung-Sik Kim
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A Si3N4 Tube Formed Using TMAH Etching

First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B, 2007
In this paper, micro-tube fabricated from SiO2/Si3N4 strained composite structures using a self-scrolling procedure is presented. This fabrication is a self-organization process using stress of bifilm. This technique is based on self-rolling of a thin highly strained SiO2/ Si3N4 bifilm detached from the substrate by TMAH selective etching. The material
Huijun Chen, Dacheng Zhang
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Reaction Kinetics of Poly-Si Etching in TMAH Solution

Solid State Phenomena, 2021
Tetramethylammonium hydroxide (TMAH) is a metal-free strong alkaline solution which can etch poly-Si. The concentration of dissolved gas as well as the concentration of TMAH affects etching rate of poly-Si. The detailed kinetics of poly-Si etching in TMAH solution is investigated in this study.
Tae Gun Park, Sang Woo Lim
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The Study of TMAH Permeation Through Protective Rubber

Polymer-Plastics Technology and Engineering, 2013
This study aimed to discuss the permeability resistance of protective materials against Tetra methyl Ammonium Hydroxide (TMAH) to help the operators to select suitable gloves to eliminate the hazard of health. The results indicated that, the protective performances of protective gloves are better against 2.38% TMAH than against 25% TMAH. As the ambient
Ching-Iuan Su, Zhi-Wei Dai, Chi-Wei Lin, Yen-Sheng Liu, Li-Wen Liu   +4 more
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Evolution of hillocks during silicon etching in TMAH

Journal of Micromechanics and Microengineering, 2000
The evolution of hillocks on (100)-silicon etched in 4 wt% tetramethyl ammonium hydroxide is studied through a detailed examination of hillock size distribution and individual hillock features using low-voltage scanning electron microscopy. Silicon samples etched for periods of 1.5, 3 and 5 min show that the population of hillocks initially comprises ...
Thong, J.T.L., Luo, P., Choi, W.K., Tan, S.C.   +3 more
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TMAH Etching of Silicon Wafer for Detector Fabrication

Advanced Materials Research, 2014
Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication of large area silicon radiation detectors is studied in this work. TMAH is widely applied in microelectronics and micromechanical fabrication etching low resistivity silicon, whereas the etching of high resistivity silicon was seldom studied by the industry.
Lin Qi, Min Yu, Shao Nan Wang, Hong Zhi Liu, Bao Hua Shi, An Qi Hu, Hong Du, Jin Yan Wang, Yu Feng Jin   +8 more
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Encapsulation of naked dies for bulk silicon etching with TMAH

Microelectronics Reliability, 2002
Abstract Because of the increasing number of metal levels within a semiconductor device and the ongoing transition to new package types failure analysis from the back side of a die becomes necessary. A useful chemical for bulk silicon removal is tetra-methyl-ammonium-hydroxide (TMAH). Because of the aggressive etch conditions, the edges of naked dies
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Formation of pyramids at surface of TMAH etched silicon

Applied Surface Science, 1999
An investigation on the influence of etchant concentration and ambient temperature on the formation of pyramids arising from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for the investigation.
Choi, W.K., Thong, J.T.L., Luo, P., Bai, Y., Tan, C.M., Chua, T.H.   +5 more
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An Experimental Study of TMAH Etching Silicon for MEMS

First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B, 2007
In the process of Micro-Electrical-Mechanical System (MEMS), the anisotropic wet chemical etching rate of the silicon wafer is very important for fabricating MEMS to determine the fabricating method, processing and etching time. The etching rates of the silicon wafer in the TMAH solution with the different temperature are obtained in this paper.
Feiyan Chen, Guoqing Hu, Baihai Wu
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