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Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon
Microelectronics Journal, 2006Abstract High precision bulk micromachining of silicon is a key process step to shape spatial structures for fabricating different type of microsensors and microactuators. A series of etching experiments have been carried out using KOH, TMAH and dual doped TMAH at different etchant concentrations and temperatures wherein silicon, silicon dioxide and ...
Kanishka Biswas, S. Kal
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Sensors and Actuators A: Physical, 2020
Abstract Almost everything has been written on silicon anisotropic etching in alkaline solutions, however, the difference between etching in pure KOH and TMAH as well as in these solutions containing tensioactive compounds has not been completely elucidated yet.
Irena Zubel
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Abstract Almost everything has been written on silicon anisotropic etching in alkaline solutions, however, the difference between etching in pure KOH and TMAH as well as in these solutions containing tensioactive compounds has not been completely elucidated yet.
Irena Zubel
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Experiments on anisotropic etching of Si in TMAH
Solar Energy Materials and Solar Cells, 2001Abstract Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70°C, 80°C and 90°C) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid
Jae Sung You +5 more
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pH-controlled TMAH etchants for silicon micromachining
Sensors and Actuators A: Physical, 1996The etching characteristics of pH-controlled tetramethyl ammonium hydroxide (TMAH) by dissolving Si or acid have been studied. TMAH with 10 and 22 wt.% at 80/spl deg/C were used as etchants, (NH/sub 4/)/sub 2/,CO/sub 3/ and (NH/sub 4/)HPO/sub 4/ were used as acid.
Osamu Tabata
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TMAH etching of silicon and the interaction of etching parameters
Sensors and Actuators A: Physical, 1997Abstract A study of tetramethylammonium hydroxide (TMAH) etching of silicon and the interaction of etching parameters has been carried out. We find that the silicon etch rate increases as the TMAH concentration increases and it reaches a maximum at 4 wt.%. The etch rate of n-type silicon is found to be slightly higher than that of p-type silicon.
Jtl Thong
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