Results 161 to 170 of about 3,949 (198)

Silicon etching characteristics for the TMAH based solution with additives

10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2015
In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10~25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C.
Ki-Wha Jun, Jung-Sik Kim
openaire   +2 more sources

The Study of TMAH Permeation Through Protective Rubber

Polymer-Plastics Technology and Engineering, 2013
This study aimed to discuss the permeability resistance of protective materials against Tetra methyl Ammonium Hydroxide (TMAH) to help the operators to select suitable gloves to eliminate the hazard of health. The results indicated that, the protective performances of protective gloves are better against 2.38% TMAH than against 25% TMAH. As the ambient
Ching-Iuan Su, Zhi-Wei Dai, Chi-Wei Lin, Yen-Sheng Liu, Li-Wen Liu   +4 more
openaire   +1 more source

Evolution of hillocks during silicon etching in TMAH

Journal of Micromechanics and Microengineering, 2000
The evolution of hillocks on (100)-silicon etched in 4 wt% tetramethyl ammonium hydroxide is studied through a detailed examination of hillock size distribution and individual hillock features using low-voltage scanning electron microscopy. Silicon samples etched for periods of 1.5, 3 and 5 min show that the population of hillocks initially comprises ...
Thong, J.T.L., Luo, P., Choi, W.K., Tan, S.C.   +3 more
openaire   +1 more source

A Si3N4 Tube Formed Using TMAH Etching

First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B, 2007
In this paper, micro-tube fabricated from SiO2/Si3N4 strained composite structures using a self-scrolling procedure is presented. This fabrication is a self-organization process using stress of bifilm. This technique is based on self-rolling of a thin highly strained SiO2/ Si3N4 bifilm detached from the substrate by TMAH selective etching. The material
Huijun Chen, Dacheng Zhang
openaire   +1 more source

Formation of pyramids at surface of TMAH etched silicon

Applied Surface Science, 1999
An investigation on the influence of etchant concentration and ambient temperature on the formation of pyramids arising from the TMAH etching of silicon has been carried out. The number and size of the pyramids were used as parameters for the investigation.
Choi, W.K., Thong, J.T.L., Luo, P., Bai, Y., Tan, C.M., Chua, T.H.   +5 more
openaire   +1 more source

TMAH Etching of Silicon Wafer for Detector Fabrication

Advanced Materials Research, 2014
Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication of large area silicon radiation detectors is studied in this work. TMAH is widely applied in microelectronics and micromechanical fabrication etching low resistivity silicon, whereas the etching of high resistivity silicon was seldom studied by the industry.
Lin Qi, Min Yu, Shao Nan Wang, Hong Zhi Liu, Bao Hua Shi, An Qi Hu, Hong Du, Jin Yan Wang, Yu Feng Jin   +8 more
openaire   +1 more source

Tetramethylammonium hydroxide (TMAH) thermochemolysis: proposed mechanisms based upon the application of 13C-labeled TMAH to a synthetic model lignin dimer

Organic Geochemistry, 1999
Abstract The mechanism by which heated tetramethylammonium hydroxide (TMAH) degrades the lignin biopolymer was investigated by the novel application of 13C-labeled TMAH (13C-TMAH) in the thermochemolysis of a synthetic model guaiacyl lignin dimer. GC-MS analysis of the products showed labeling patterns consistent with a base-catalyzed intramolecular ...
T.R. Filley, R.D. Minard, P.G. Hatcher
openaire   +1 more source

Encapsulation of naked dies for bulk silicon etching with TMAH

Microelectronics Reliability, 2002
Abstract Because of the increasing number of metal levels within a semiconductor device and the ongoing transition to new package types failure analysis from the back side of a die becomes necessary. A useful chemical for bulk silicon removal is tetra-methyl-ammonium-hydroxide (TMAH). Because of the aggressive etch conditions, the edges of naked dies
openaire   +2 more sources

An Experimental Study of TMAH Etching Silicon for MEMS

First International Conference on Integration and Commercialization of Micro and Nanosystems, Parts A and B, 2007
In the process of Micro-Electrical-Mechanical System (MEMS), the anisotropic wet chemical etching rate of the silicon wafer is very important for fabricating MEMS to determine the fabricating method, processing and etching time. The etching rates of the silicon wafer in the TMAH solution with the different temperature are obtained in this paper.
Feiyan Chen, Guoqing Hu, Baihai Wu
openaire   +1 more source

Effect of TMAH on rheological behavior of SiC aqueous suspension

Journal of the European Ceramic Society, 2004
Tetramethyl ammonium hydroxide (TMAH) was used as dispersant for SiC aqueous suspension. The effects of dispersant concentration and pH on the rheological behavior of SiC aqueous suspension were studied. TMAH improves dispersion by increasing the negative zeta potential of SiC particles. The recommended amount of TMAH is 0.6 wt.% in order to obtain the
Wei Li, Ping Chen, Mingyuan Gu, Yanping Jin   +3 more
openaire   +1 more source