Results 1 to 10 of about 812 (165)
The Origin of Efficiency in III-Nitride Micro-Light-Emitting Diodes. [PDF]
Adv Sci (Weinh)The images show panchromatic cathodoluminescence of III‐V materials, which reveal that AlGaInP red wafers, having fewer defects, support longer carrier diffusion lengths. Meanwhile, the density of defects increases with longer emission wavelengths in the InGaN system, illustrating how generated carriers pass through the material and how defects limit ...
Park JH +11 more
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InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications [PDF]
Micromachines, 2023 The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion ...
Krzysztof Gibasiewicz +6 more
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Wet etching of (−102) β-Ga2O3 with tetramethylammonium hydroxide (TMAH) [PDF]
Science and Technology of Advanced MaterialsWe investigated wet etching of (−102) β-Ga2O3 substrates using heated 25 wt% tetramethylammonium hydroxide (TMAH). The (−102) plane exhibited an etching rate that was one order of magnitude higher than those of the widely used (100), (010), (001), and ...
Takayoshi Oshima
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Design and Fabrication of Silicon Pressure Sensors Based on Wet Etching Technology [PDF]
MicromachinesThis paper presents a novel silicon-based piezoresistive pressure sensor composed of a silicon layer with sensing elements and a glass cover for hermetic packaging.
Fengchao Li +9 more
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Piezoelectric Micromachined Ultrasonic Transducers with Micro-Hole Inter-Etch and Sealing Process on (111) Silicon Wafer [PDF]
MicromachinesPiezoelectric micromachined ultrasound transducers (PMUTs) have gained significant popularity in the field of ultrasound ranging and medical imaging owing to their small size, low power consumption, and affordability.
Yunhao Wang +4 more
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Energies, 2021 This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface ...
Nedal Al Taradeh +9 more
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High speed silicon wet anisotropic etching for applications in bulk micromachining: a review
Micro and Nano Systems Letters, 2021 Wet anisotropic etching is extensively employed in silicon bulk micromachining to fabricate microstructures for various applications in the field of microelectromechanical systems (MEMS).
Prem Pal +5 more
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Energies, 2021 TMAH is quaternary ammonium salt, consists of a methylated nitrogen molecule, and is widely used in the electronics industry as a developer and silicon etching agent. This substance is toxic and fatal if ingested. It can also cause skin burns, eye damage,
Valentina Innocenzi +3 more
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Controllable arrangement of integrated obstacles in silicon microchannels etched in 25 wt.% TMAX [PDF]
Hemijska Industrija, 2021 In this paper, fabrication of silicon microchannels with integrated obstacles by using 25 wt.% tetramethylammonium hydroxide (TMAH) aqueous solution at the temperature of 80°C is presented and analysed.
Smiljanić Milče M. +7 more
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Insights Into the Influence of Sidewall Morphology on the Light Extraction Efficiency of Mini-LEDs
IEEE Photonics Journal, 2019 We systemically investigated the influence of sidewall morphology change based on TMAH etching on the optical performance of mini-LEDs. The dominant feature of prism structures on the sidewall of mini-LEDs with TMAH etching treatment varied from ...
Bin Tang +5 more
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