Results 1 to 10 of about 774 (69)

Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching [PDF]

Технологія та конструювання в електронній апаратурі, 2013
The author suggests using the etching method MacEtch (metal-assisted chemical etching) for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of ...
I. R. Iatsunskyi
doaj   +2 more sources

Dry etching of monocrystalline silicon using a laser-induced reactive micro plasma

Applied Surface Science Advances, 2021
Dry etching is a prevalent technique for pattern transfer and material removal in microelectronics, optics and photonics due to its high precision material removal with low surface and subsurface damage.
Robert Heinke, Martin Ehrhardt, Pierre Lorenz, Klaus Zimmer   +3 more
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Variation of Bulk Etch Rate and some other Etching Parameters with Etching Temperature for Cellulose Nitrate LR-115 Detector [PDF]

مجلة التربية والعلم, 2009
In the present work, the variation of the bulk etch rate and some other etching parameters, such as removed active-layer thickness, track growing rate, track etch rate with etching temperature is measured for the solid-state nuclear track detector (SSNTD)
Ali Hussain
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Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment

Applied Sciences, 2022
During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers.
Ching-Ming Ku, Stone Cheng
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Study of the Pattern Preparation and Performance of the Resistance Grid of Thin-Film Strain Sensors

Micromachines, 2022
The thin-film strain sensor is a cutting-force sensor that can be integrated with cutting tools. The quality of the alloy film strain layer resistance grid plays an important role in the performance of the sensor.
Yunping Cheng, Wenge Wu, Yongjuan Zhao, Yanwen Han, Ding Song   +4 more
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Mechanism of ion etching polycrystalline copper and influence on surface morphology

Cailiao gongcheng, 2023
In order to better understand the surface morphology and formation mechanism of ion-etched pure copper, argon ion implantation was used to etch polycrystalline pure copper.
YI Chenxi, TIAN Yefei, ZHANG Haotian, HU Yue, BAO Mingdong   +4 more
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Influence of Temperature and Acid Etching Time on the Superficial Characteristics of Ti [PDF]

Materials Research, 2015
We evaluated the influence of the etching time and temperature of an acid solution (HCl/H2SO4) on the chemical and topographical superficial characteristics of cpTi grade IV.
Bruno Ramos Chrcanovic, Ann Wennerberg, Maximiliano Delany Martins   +2 more
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Optical Properties of Porous Silicon Solar Cells for Use in Transport

Communications, 2019
Porous silicon (pSi) samples were prepared by electrochemical etching of p-type silicon (p-type Si) substrate. Three pSi samples with different parameters of electrochemical etching (electrical potential, etching time, etching current) were prepared and ...
Martin Kralik, Michaela Hola, Stanislav Jurecka   +2 more
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Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process

Nanomaterials, 2023
Gate-all-around (GAA) structures are important for future logic devices and 3D-DRAM. Inner-spacer cavity etching and channel release both require selective etching of Si0.7Ge0.3.
Enxu Liu, Junjie Li, Na Zhou, Rui Chen, Hua Shao, Jianfeng Gao, Qingzhu Zhang, Zhenzhen Kong, Hongxiao Lin, Chenchen Zhang, Panpan Lai, Chaoran Yang, Yang Liu, Guilei Wang, Chao Zhao, Tao Yang, Huaxiang Yin, Junfeng Li, Jun Luo, Wenwu Wang   +19 more
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Investigation into SiO₂ Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled

Nanomaterials, 2022
SiO2 etching characteristics were investigated in detail. Patterned SiO2 was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases.
Won-nyoung Jeong, Young-seok Lee, Chul-hee Cho, In-ho Seong, Shin-jae You   +4 more
doaj   +1 more source