Results 21 to 30 of about 157,681 (294)
Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures [PDF]
, 2002 This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas at cryogenic temperatures.
Boer, Meint J. de +6 more
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Nanomaterials, 2020 In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F2/N2 gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products ...
Bishal Kafle +6 more
doaj +1 more source
Investigation on Surface Roughness of Inconel 718 in Photochemical Machining
Advances in Materials Science and Engineering, 2017 The present work is focused on estimating the optimal machining parameters required for photochemical machining (PCM) of an Inconel 718 and effects of these parameters on surface topology.
Nitin D. Misal, Mudigonda Sadaiah
doaj +1 more source
Balancing ion parameters and fluorocarbon chemical reactants for SiO2 pattern transfer control using fluorocarbon-based atomic layer etching [PDF]
, 2019 In manufacturing, etch profiles play a significant role in device patterning. Here, the authors present a study of the evolution of etch profiles of nanopatterned silicon oxide using a chromium hard mask and a CHF3/Ar atomic layer etching in a ...
Cabrini, S +8 more
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Investigation on Chemical Etching Process of FPCB With 18
IEEE Access, 2021 Flexible printed circuit boards (FPCB) are widely used in smart devices with high wiring density and light weight. In this paper, the chemical etching process of FPCB with 18 $\mu \text{m}$ line pitch is investigated.
Jiazheng Sheng +7 more
doaj +1 more source
Plasma removal of Parylene C [PDF]
, 2008 Parylene C, an emerging material in microelectromechanical systems, is of particular interest in biomedical and lab-on-a-chip applications where stable, chemically inert surfaces are desired.
Li, Po-Ying, Meng, Ellis, Tai, Yu-Chong
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Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators
Micromachines, 2015 We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface
Jian Yang +6 more
doaj +1 more source
Basic elements for photodeposited high Tc thin film devices [PDF]
, 1992 Flat films, high quality insulating layers and adequately superconducting via contacts are basic elements for high Tc device fabrication. We studied the influence of the process parameters of laser deposition on the occurrence of droplets and outgrowths ...
Flokstra, J. +2 more
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Beilstein Journal of Nanotechnology, 2016 The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is ...
Siti Noorhaniah Yusoh +1 more
doaj +1 more source
Gas-Surface Dynamics and Profile Evolution during Etching of Silicon [PDF]
, 1996 Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics.
Anderson, C. M. +5 more
core +1 more source