Results 11 to 20 of about 157,681 (294)

Mechanism of ion etching polycrystalline copper and influence on surface morphology

Cailiao gongcheng, 2023
In order to better understand the surface morphology and formation mechanism of ion-etched pure copper, argon ion implantation was used to etch polycrystalline pure copper.
YI Chenxi, TIAN Yefei, ZHANG Haotian, HU Yue, BAO Mingdong   +4 more
doaj   +1 more source

Influence of Temperature and Acid Etching Time on the Superficial Characteristics of Ti [PDF]

Materials Research, 2015
We evaluated the influence of the etching time and temperature of an acid solution (HCl/H2SO4) on the chemical and topographical superficial characteristics of cpTi grade IV.
Bruno Ramos Chrcanovic, Ann Wennerberg, Maximiliano Delany Martins   +2 more
doaj   +1 more source

Optical Properties of Porous Silicon Solar Cells for Use in Transport

Communications, 2019
Porous silicon (pSi) samples were prepared by electrochemical etching of p-type silicon (p-type Si) substrate. Three pSi samples with different parameters of electrochemical etching (electrical potential, etching time, etching current) were prepared and ...
Martin Kralik, Michaela Hola, Stanislav Jurecka   +2 more
doaj   +1 more source

Plasma Processing of Large Curved Surfaces for SRF Cavity Modification [PDF]

, 2014
Plasma based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. The development of the technology based on Cl2/Ar plasma etching has to address several crucial parameters which ...
Im, Do, Phillips, L., Popović, S., Upadhyay, J., Valente-Feliciano, A. -M., Vušković, L.   +5 more
core   +4 more sources

Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process

Nanomaterials, 2023
Gate-all-around (GAA) structures are important for future logic devices and 3D-DRAM. Inner-spacer cavity etching and channel release both require selective etching of Si0.7Ge0.3.
Enxu Liu, Junjie Li, Na Zhou, Rui Chen, Hua Shao, Jianfeng Gao, Qingzhu Zhang, Zhenzhen Kong, Hongxiao Lin, Chenchen Zhang, Panpan Lai, Chaoran Yang, Yang Liu, Guilei Wang, Chao Zhao, Tao Yang, Huaxiang Yin, Junfeng Li, Jun Luo, Wenwu Wang   +19 more
doaj   +1 more source

Anisotropic Etching of Graphite and Graphene in a Remote Hydrogen Plasma [PDF]

, 2017
We investigate the etching of a pure hydrogen plasma on graphite samples and graphene flakes on SiO$_2$ and hexagonal Boron-Nitride (hBN) substrates. The pressure and distance dependence of the graphite exposure experiments reveals the existence of two ...
Camenzind, Timothy N., Hug, Dorothee, Kalyoncu, Yemliha B., Marot, Laurent, Rehmann, Mirko K., Taniguchi, Takashi, Watanabe, Kenji, Zihlmann, Simon, Zumbühl, Dominik M.   +8 more
core   +2 more sources

Controlled nonuniformity in macroporous silicon pore growth [PDF]

, 2005
Photoelectrochemical etching of uniform prestructured silicon wafers in hydrofluoric acid containing solutions yields periodic structures that can be applied to two- and three-dimensional photonic crystals or microfluidics.
Gösele, Ulrich, Matthias, Sven, Müller, Frank   +2 more
core   +1 more source

Reactive Ion Etching Process of Micro Mechanical Pendulum

MATEC Web of Conferences, 2017
This paper describes the reactive ion etching (RIE) technique of micro mechanical pendulum chip. Micro mechanical pendulum chip processed by the RIE has excellent performances and surface of the chip is smoother than the chip by wet etching.
Zhang Wei, Duan Xiaoyan, Qiao Jin, Yue Ping   +3 more
doaj   +1 more source

Investigation into SiO₂ Etching Characteristics Using Fluorocarbon Capacitively Coupled Plasmas: Etching with Radical/Ion Flux-Controlled

Nanomaterials, 2022
SiO2 etching characteristics were investigated in detail. Patterned SiO2 was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases.
Won-nyoung Jeong, Young-seok Lee, Chul-hee Cho, In-ho Seong, Shin-jae You   +4 more
doaj   +1 more source

Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching [PDF]

, 2019
With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is steadily increasing.
Cabrini, S, Cooke, M, Dallorto, S, Goodyear, A, Kastl, C, Rangelow, IW, Schwartzberg, A, Szornel, JE, Ward, C   +8 more
core   +1 more source