Results 11 to 20 of about 923 (213)

Studying the Effect of Different Etching Parameters on the Physical Properties of Porous Silicon Prepared By Electrochemical Etching [PDF]

Engineering and Technology Journal, 2015
In this work we prepared a porous Silicon (PS) layer by electrochemical etching (ECE) technique using different etching parameters including current density, anodization time and Hydrofluoric (HF) acid concentration.
Haider Amer Khalaf, Uday Muhsin Nayef
doaj   +2 more sources

Estimation of the Optimum Etching Time and Etching Parameters for CR-39 Nuclear Tracks Detector by Applying Plasma and Chemical Etching Techniques

Al-Mustansiriyah Journal of Science
Background: CR-39 nuclear track detectors are widely used in various fields, including science, technology, astronomy, and environmental preservation, to detect and register heavy ions, neutrons, and alpha particles.
Abdulkader Makki Dahham, Jamoliddin Razzokov, Eldor Karimbaev, Raghad S. Mohammed   +3 more
doaj   +2 more sources

Reactive Ion Etching Process of Micro Mechanical Pendulum

MATEC Web of Conferences, 2017
This paper describes the reactive ion etching (RIE) technique of micro mechanical pendulum chip. Micro mechanical pendulum chip processed by the RIE has excellent performances and surface of the chip is smoother than the chip by wet etching.
Zhang Wei, Duan Xiaoyan, Qiao Jin, Yue Ping   +3 more
doaj   +1 more source

Investigation on Surface Roughness of Inconel 718 in Photochemical Machining

Advances in Materials Science and Engineering, 2017
The present work is focused on estimating the optimal machining parameters required for photochemical machining (PCM) of an Inconel 718 and effects of these parameters on surface topology.
Nitin D. Misal, Mudigonda Sadaiah
doaj   +1 more source

On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas

Nanomaterials, 2020
In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F2/N2 gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products ...
Bishal Kafle, Ahmed Ismail Ridoy, Eleni Miethig, Laurent Clochard, Edward Duffy, Marc Hofmann, Jochen Rentsch   +6 more
doaj   +1 more source

Investigation on Chemical Etching Process of FPCB With 18 μm Line Pitch

IEEE Access, 2021
Flexible printed circuit boards (FPCB) are widely used in smart devices with high wiring density and light weight. In this paper, the chemical etching process of FPCB with 18 $\mu \text{m}$ line pitch is investigated.
Jiazheng Sheng, Hui Li, Shengnan Shen, Ruijian Ming, Bin Sun, Jian Wang, Daode Zhang, Yinggang Tang   +7 more
doaj   +1 more source

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

Beilstein Journal of Nanotechnology, 2016
The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is ...
Siti Noorhaniah Yusoh, Khatijah Aisha Yaacob   +1 more
doaj   +1 more source

Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

Micromachines, 2015
We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface
Jian Yang, Chaowei Si, Guowei Han, Meng Zhang, Liuhong Ma, Yongmei Zhao, Jin Ning   +6 more
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Research Review of InAs/GaSb Superlattice Mesa Etching Process [PDF]

Hangkong bingqi
This paper reviews the research on InAs/GaSb superlattice mesa etching technology. The physicochemi-cal mechanism and parameter control of wet and dry etching are analyzed to elucidate the influence of process conditions on mesa morphology, so as to ...
Zhang Xiangyu, Jiang Dongwei, He Wen, Wang Jinzhong
doaj   +1 more source

The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon

Journal of Telecommunications and Information Technology, 2023
We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high- temperature ...
Małgorzata Kalisz, Romuald B. Beck, Adam Barcz, Michał Ćwil   +3 more
doaj   +1 more source