Results 11 to 20 of about 812 (165)

Fabrication of Submicron Beams with Galvanic Etch Stop for Si in TMAH [PDF]

open access: yesSensors, 2009
A novel method has been developed to fabricate submicron beams with galvanic etch stop for Si in TMAH. The different Au:Si area ratios before and after the release of the beams are used to trigger the galvanic etch stop to fabricate submicron single ...
Yuelin Wang   +5 more
doaj   +3 more sources

Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution

open access: yesNanomaterials, 2023
A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made ScxAl1−xN a promising material in numerous MEMS and optoelectronics applications.
A. S. M. Zadid Shifat   +6 more
doaj   +3 more sources

Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes

open access: yesNanomaterials, 2019
We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of ...
Hui Wan   +5 more
doaj   +1 more source

Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching

open access: yesApplied Physics Express, 2023
The effect of tetramethylammonium hydroxide (TMAH) treatment prior to gate dielectric deposition on the performance of recessed-gate AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) was investigated.
Yu Li   +11 more
doaj   +1 more source

Environmentally Benign Formation of Nickel Hexacyanoferrate-Derived Mesoframes for Heterogeneous Catalysis

open access: yesNanomaterials, 2021
The tetramethylammonium hydroxide (TMAH)-controlled alkaline etching of nickel hexacyanoferrate (NiHCF) mesocrystals is explored. The alkaline etching enables the formation of hollow framework structures with an increased surface area, the exposure of ...
Sascha Keßler   +3 more
doaj   +1 more source

Two-step Fabrication of Large Area SiO2/Si Membranes

open access: yesMedžiagotyra, 2012
Two-step fabrication technique of SiO2/Si membrane combining the deep local etching of double side polished and thermally oxidized silicon <100> wafer in tetramethylammonium hydroxide (TMAH) water solution and SF6/O2 reactive ion etching is ...
Viktoras GRIGALIŪNAS   +7 more
doaj   +1 more source

Fabrication of Sio2-based microcantilevers by anisotropic chemical etching of (100) single crystal Si [PDF]

open access: yesJournal of the Serbian Chemical Society, 2007
The undercutting process of thermal SiO2 microcantilevers with different orientations on (100) Si wafer was studied. The silicon substrate was removed by anisotropic chemical etching with a 25 wt. % aqueous solution of TMAH or a 30 wt.
Jović Vesna   +3 more
doaj   +3 more sources

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

open access: yesBeilstein Journal of Nanotechnology, 2016
The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is ...
Siti Noorhaniah Yusoh   +1 more
doaj   +1 more source

Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall

open access: yesNanomaterials, 2019
Current solutions for improving the light extraction efficiency of flip-chip light-emitting diodes (LEDs) mainly focus on relieving the total internal reflection at sapphire/air interface, but such methods hardly affect the epilayer mode photons.
Bin Tang   +6 more
doaj   +1 more source

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

open access: yesNanomaterials, 2020
The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio ...
Yue Sun   +7 more
doaj   +1 more source

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