Results 21 to 30 of about 812 (165)
TMAH/IPA anisotropic etching characteristics
The main advantages of tetramethyl ammonium hydroxide (TMAH)-based solutions is their full compatibility with IC technologies. In this work a new etching system of TMAH/IPA (isopropyl alcohol) is suggested. The influence of the addition of IPA to TMAH solutions on their etching characteristics is presented.
Merlos Domingo, Ángel +4 more
openaire +2 more sources
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles [PDF]
We demonstrated heated tetramethylammonium hydroxide (TMAH) etching (25 wt. % concentration, at 90 °C) as an effective post-dry-etch treatment for improving dry-etched trench profiles on (010) β-Ga2O3. This treatment successfully converted rough, tapered
Takayoshi Oshima
doaj +1 more source
Curvature-Modulated Si Spherical Cap-Like Structure Fabricated by Multistep Ring Edge Etching
To create approximately spherical structures with curved sidewalls, this paper presents a method for building a series of decreasing slopes along the sidewall of a circular truncated cone.
Tieying Ma, Jiachen Wang, Dabo Li
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Systematic study of the etching characteristics of Si{111} in modified TMAH [PDF]
Wet bulk micromachining on Si{111} is done to fabricate simple to complex microstructures for applications in sensors and actuators. In this work, it has been performed a systematic study of Si{111} in modified 5 wt% tetramethyl‐ammonium hydroxide (TMAH) with varying concentration of NH 2 OH ...
Veerla Swarnalatha +6 more
openaire +2 more sources
We demonstrated dual-surface modification of GaN/AlGaN/GaN high-electron mobility transistors using tetramethylammonium hydroxide (TMAH) and piranha solutions prior to gate metallization.
M. Siva Pratap Reddy +3 more
doaj +1 more source
Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C
This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C.
Milče M. Smiljanić +4 more
doaj +1 more source
Friction-induced selective etching on silicon by TMAH solution
Friction-induced selective etching by TMAH solution was proposed for patterning a silicon surface with site control, high flexibility and low cost.
Chao Zhou +7 more
openaire +3 more sources
Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation
In this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that are ...
Jun Hyeok Heo +5 more
doaj +1 more source
Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH
This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated ...
C. R. Tellier +2 more
doaj +1 more source
Tetramethyl ammonium hydroxide (TMAH) is an anisotropic etchant used in the wet etching process of the semiconductor industry and is hard to degrade by biotreatments when it exists in wastewater.
Chyow-San Chiou +4 more
doaj +1 more source

