Results 31 to 40 of about 3,921 (200)
Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C
Micromachines, 2020 This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C.
Milče M. Smiljanić +4 more
doaj +1 more source
Systematic study of the etching characteristics of Si{111} in modified TMAH [PDF]
Micro & Nano Letters, 2020 Wet bulk micromachining on Si{111} is done to fabricate simple to complex microstructures for applications in sensors and actuators. In this work, it has been performed a systematic study of Si{111} in modified 5 wt% tetramethyl‐ammonium hydroxide (TMAH) with varying concentration of NH 2 OH ...
Veerla Swarnalatha +6 more
openaire +2 more sources
IEEE Journal of the Electron Devices Society, 2018 We demonstrated dual-surface modification of GaN/AlGaN/GaN high-electron mobility transistors using tetramethylammonium hydroxide (TMAH) and piranha solutions prior to gate metallization.
M. Siva Pratap Reddy +3 more
doaj +1 more source
3D-Nanomachining using corner lithography [PDF]
, 2008 We present a fabrication method to create 3D nano structures without the need for nano lithography. The method, named "corner lithography" is based on conformal deposition and subsequent isotropic thinning of a thin film.
Berenschot, J.W. +3 more
core +3 more sources
A Comprehensive Review on Convex and Concave Corners in Silicon Bulk Micromachining based on Anisotropic Wet Chemical Etching [PDF]
, 2015 Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestanding (e.g. cantilever) and fixed (e.g. cavity) structures on different orientation silicon wafers for various applications in microelectromechanical ...
Pal, Prem, Sato, K
core +1 more source
Friction-induced selective etching on silicon by TMAH solution
RSC Advances, 2018 Friction-induced selective etching by TMAH solution was proposed for patterning a silicon surface with site control, high flexibility and low cost.
Chao Zhou +7 more
openaire +3 more sources
Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation
Results in PhysicsIn this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that are ...
Jun Hyeok Heo +5 more
doaj +1 more source
Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH
Active and Passive Electronic Components, 2000 This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated ...
C. R. Tellier +2 more
doaj +1 more source
Design and Fabrication of Double-Layer Crossed Si Microchannel Structure
Micromachines, 2021 A four-step etching method is used to prepare the double-layer cross Si microchannel structure. In the first etching step, a V-groove structure is etched on (100) silicon, and the top channel is formed after thermal oxidation with the depth of the ...
Yipeng Wang, Weijian Zhou, Tieying Ma
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International Journal of Photoenergy, 2013 Tetramethyl ammonium hydroxide (TMAH) is an anisotropic etchant used in the wet etching process of the semiconductor industry and is hard to degrade by biotreatments when it exists in wastewater.
Chyow-San Chiou +4 more
doaj +1 more source